Datasheet

Integrated Temperature
Controllers for Peltier Modules
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= PV
DD
1 = PV
DD
2 = V
SHDN
= 5V, FREQ = GND, CTLI = FB+ = FB- = MAXV = MAXIP = MAXIN = REF, T
A
= 0°C to +85°C,
unless otherwise noted. Typical values at T
A
= +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
V
LX
= 0, T
A
= +25°C 0.02 10
PFET Leakage I
LEAK(P)
V
LX
= 0, T
A
= +85°C1
µA
V
DD
= 5V 30 50
No-Load Supply Current
I
DD(NO
LOAD) V
DD
= 3.3V 15 30
mA
Shutdown Supply Current I
DD-SD
SHDN = GND, V
DD
= 5V (Note 3) 2 3 mA
Thermal Shutdown T
S H U TD OWN
Hysteresis = 15°C 165 °C
V
DD
rising 2.4 2.6 2.8
UVLO Threshold V
UVLO
V
DD
falling 2.25 2.5 2.75
V
FREQ = GND 450 500 650
Switching Frequency Internal
Oscillator
f
SW-INT
FREQ=V
DD
800 1000 1200
kHz
OS1, OS2, CS Input Current
I
OS1
, I
OS2
,
I
CS
0 or V
DD
-100 +100 µA
SHDN, FREQ Input Current
I
SHDN
,
I
FREQ
0 or V
DD
-5 +5 µA
SHDN, FREQ Input Low Voltage V
IL
V
DD
= 3V to 5.5V
0.25 ×
V
DD
V
SHDN, FREQ Input High Voltage V
IH
V
DD
= 3V to 5.5V
0.75 ×
V
DD
V
V
MAXV
= V
REF
✕
0.67,
V
OS1
to V
OS2
= ±4V, V
DD
= 5V
-1 +1
MAXV Threshold Accuracy
V
MAXV
= V
REF
✕
0.33,
V
OS1
to V
OS2
= ±2V, V
DD
= 3V
-2 +2
%
MAXV, MAXIP, MAXIN
Input Bias Current
I
MAXV-BIAS
,
I
MAXI_-BIAS
V
MAXV
= V
MAXI_
= 0.1V or 1.5V -0.1 +0.1 µA
CTLI Gain A
CTLI
V
CTLI
= 0.5V to 2.5V (Note 4) 9.5 10 10.5 V/V
CTLI Input Resistance R
CTLI
1MΩ terminated at REF 0.5 1.0 2.0 MΩ
Error Amp Transconductance g
m
50 100 175 µS
ITEC Accuracy V
OS1
to V
CS
= +100mV or -100mV -10 +10 %
ITEC Load Regulation ∆V
ITEC
V
OS1
to V
CS
= +100mV or -100mV,
I
ITEC
= ±10µA
-0.1 +0.1 %
Instrumentation Amp Input Bias
Current
I
DIF-BIAS
-10 0 +10 nA
Instrumentation Amp Offset
Voltage
V
DIF-OS
V
DD
= 3V to 5.5V -200 +20 +200 µV
Instrumentation Amp Offset-
Voltage Drift with Temperature
V
DD
= 3V to 5.5V 0.1 µV/°C
Instrumentation Amp Preset
Gain
A
DIF
R
LOAD
= 10kΩ to REF 45 50 55 V/V
MAX1978/MAX1979
Maxim Integrated
3