Datasheet
For output voltages below 1V, set the MAX1858 output
voltage by connecting a voltage-divider from the output
to FB_ to REF (Figure 6). Select R_C (FB to REF resis-
tor) in the 1kΩ to 10kΩ range. Calculate R_A with the
following equation:
where V
SET
= 1V, V
REF
= 2V (see the Electrical
Characteristics), and V
OUT
can range from 0 to V
SET
.
Setting the Switching Frequency
The controller generates the clock signal by dividing
down the internal oscillator or SYNC input signal when
driven by an external oscillator, so the switching frequen-
cy equals half the oscillator frequency (f
SW
= f
OSC
/2).
The internal oscillator frequency is set by a resistor
(R
OSC
) connected from OSC to GND. The relationship
between f
SW
and R
OSC
is:
where f
SW
is in Hz, f
OSC
is in Hz, and R
OSC
is in Ω. For
example, a 600kHz switching frequency is set with
R
OSC
= 10kΩ. Higher frequencies allow designs with
lower inductor values and less output capacitance.
Consequently, peak currents and I
2
R losses are lower
at higher switching frequencies, but core losses, gate-
charge currents, and switching losses increase.
A rising clock edge on SYNC is interpreted as a syn-
chronization input. If the SYNC signal is lost, the inter-
nal oscillator takes control of the switching rate,
returning the switching frequency to that set by R
OSC
.
This maintains output regulation even with intermittent
SYNC signals. When an external synchronization signal
is used, R
OSC
should set the switching frequency to
one half SYNC rate (f
SYNC
).
Inductor Selection
Three key inductor parameters must be specified for
operation with the MAX1858: inductance value (L),
peak-inductor current (I
PEAK
), and DC resistance
(R
DC
). The following equation assumes a constant ratio
of inductor peak-to-peak AC current to DC average
current (LIR). For LIR values too high, the RMS currents
are high, and therefore I
2
R losses are high. Large
inductances must be used to achieve very low LIR val-
ues. Typically inductance is proportional to resistance
(for a given package type) which again makes I
2
R loss-
es high for very low LIR values. A good compromise
between size and loss is a 30% peak-to-peak ripple
current to average-current ratio (LIR = 0.3). The switch-
ing frequency, input voltage, output voltage, and
selected LIR determine the inductor value as follows:
where V
IN
, V
OUT
, and I
OUT
are typical values (so that
efficiency is optimum for typical conditions). The switch-
ing frequency is set by R
OSC
(see the Setting the
Switching Frequency section). The exact inductor value
is not critical and can be adjusted in order to make
trade-offs among size, cost, and efficiency. Lower
inductor values minimize size and cost, but also
improve transient response and reduce efficiency due
to higher peak currents. On the other hand, higher
inductance increases efficiency by reducing the RMS
current. However, resistive losses due to extra wire turns
can exceed the benefit gained from lower AC current
levels, especially when the inductance is increased
without also allowing larger inductor dimensions.
Find a low-loss inductor having the lowest possible DC
resistance that fits in the allotted dimensions. The
inductor’s saturation rating must exceed the peak-
inductor current at the maximum defined load current
(I
LOAD(MAX)
):
Setting the Valley Current Limit
The minimum current-limit threshold must be high enough
to support the maximum expected load current with the
worst-case low-side MOSFET on-resistance value since
the low-side MOSFET’s on-resistance is used as the cur-
rent-sense element. The inductor’s valley current occurs
at I
LOAD(MAX)
minus half of the ripple current. The cur-
rent-sense threshold voltage (V
ITH
) should be greater
than voltage on the low-side MOSFET during the ripple-
current valley:
where R
DS(ON)
is the on-resistance of the low-side
MOSFET (N
L
). Use the maximum value for R
DS(ON)
from the low-side MOSFET’s data sheet, and additional
margin to account for R
DS(ON)
rise with temperature is
also recommended. A good general rule is to allow
0.5% additional resistance for each °C of the MOSFET
junction temperature rise.
VR I
LIR
ITH DS ONMAX LOAD MAX
>××
(, ) ( )
1
2
-
II
LIR
I
PEAK LOAD MAX LOAD MAX
=+
() ()
2
L
VVV
V f I LIR
OUT IN OUT
IN SW OUT
=
()-
R
Hz
S
f
OSC
SW
=
×610
9
Ω -
RA RC
VV
VV
SET OUT
REF SET
__=
-
-
-
MAX1858
Dual 180° Out-of-Phase PWM Step-Down
Controller with Power Sequencing and POR
______________________________________________________________________________________ 13