Datasheet

MAX16962
4A, 2.2MHz, Synchronous Step-Down
DC-DC Converter
2Maxim Integrated
PV, PV1, PV2 to GND ..............................................-0.3V to +6V
EN, PG to GND .......................................................-0.3V to +6V
PGND1 and PGND2 to GND ..............................-0.3V to +0.3V
LX1, LX2 Continuous RMS Current
(LX1 connected in Parallel with LX2) ...................................4A
LX Current (LX1 connected in Parallel with LX2).....Q6A (Note 5)
All Other Pins Voltages to GND .. (V
PV
+ 0.3V) to (V
GND
- 0.3V)
Output Short-Circuit Duration .................................... Continuous
Continuous Power Dissipation (T
A
= +70NC)
TQFN (derate 25mW/NC above +70NC)................... 2000mW*
TSSOP (derate 26.1mW/NC above +70NC)........... 2088.8mW*
Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
TQFN
Junction-to-Ambient Thermal Resistance (B
JA
) ..........40NC/W
Junction-to-Case Thermal Resistance (B
JC
) .................6NC/W
TSSOP
Junction-to-Ambient Thermal Resistance (B
JA
) ....38.3NC/W
Junction-to-Case Thermal Resistance (B
JC
) .............. 3NC/W
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS
(V
PV
= V
PV1
= V
PV2
= 5V, V
EN
= 5V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
*As per JEDEC51 Standard (multilayer board).
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage Range VPV Normal operation 2.7 5.5 V
Supply Current IPV No load, VPWM = 0V 12 26 45 FA
Shutdown Supply Current ISHDN VEN = 0V, TA = +25
°
C 1 5 FA
Undervoltage Lockout Threshold
Low
VUVLO_L 2.37 V
Undervoltage Lockout Threshold
High
VUVLO_H 2.6 V
Undervoltage Lockout Hysteresis 0.07 V
SYNCHRONOUS STEP-DOWN DC-DC CONVERTER
FB Regulation Voltage VOUTS 800 mV
Feedback Set-Point Accuracy VOUTS
ILOAD = 4A -3.7 0 +2.6
%
ILOAD = 0A -1.9 +2.6
pMOS On-Resistance RDSON_P
VPV1 = 5V, ILX_ = 0.4A,
LX1 in parallel with LX2
34 55 mI
nMOS On-Resistance RDSON_N
VPV1 = 5V, ILX_ = 0.8A,
LX1 in parallel with LX2
25 45 mI