Datasheet

Automotive Power-Management IC with
Three Step-Down Converters and Linear Regulator
MAX16920
2
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
OUT1, OUT2, FB1, FB2, FB3, POR, PG2,
PG3, PGA, OT to GND
.........................................-0.3V to +6V
UVO, EN2, EN3, ENA, OUTA, SYNC, V
L
to GND ...-0.3V to +6V
UVI, UVS to GND
..................................................-0.3V to +20V
UVI, UVS Input Current
................................................... ±10mA
OUT3 to GND
........................................................-0.3V to +10V
V
INA
, V
INB
, ODRV, LX1, LX2, LX3 to GND (500ms)..-0.3V to +45V
V
INA
to V
INB
.............................................................-2V to +18V
BST1, BST2, BST3 to PGND_ (500ms)
.................-0.3V to +50V
Continuous Power Dissipation (T
A
= +70°C)
TQFN (derate 37mW/°C above +70°C)
.....................2963mW
Operating Temperature Range
........................ -40°C to +125°C
Junction Temperature
.....................................................+150°C
Storage Temperature Range
............................ -65°C to +150°C
Lead Temperature (soldering, 10s)
................................+300°C
Soldering Temperature (reflow)
......................................+260°C
ELECTRICAL CHARACTERISTICS
(V
INA
= V
INB
= 14V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TQFN
Junction-to-Ambient Thermal Resistance (q
JA
) ..........27°C/W
Junction-to-Case Thermal Resistance (q
JC
) .................1°C/W
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
V
INA
/V
INB
Operating Supply
Range
V
IN
Full performance 5.5 18
V
DC-DC1 maintains regulation,
I
OUT1
= 100mA (Note 2)
4 28
V
INA
/V
INB
Supply Current in
Operation
I
IN
EN2 = EN3 = ENA = high, no
switching
2 3 mA
V
INA
/V
INB
Supply Current,
Standby Mode
I
ST
Only DC-DC1 operating, EN2 = EN3
= ENA = low, I
OUT1
= no load
25 50
FA
V
L
Undervoltage Lockout V
UVL
V
L
rising 2.9 3.15 3.4 V
V
L
Undervoltage Lockout
Hysteresis
V
UVH
0.4 V
V
L
Output Voltage V
L
5 V
UVI Threshold UVL V
INA
/V
INB
falling
1.181
(-2%)
1.205
1.229
(+2%)
V
UVI Input Current I
UVI
V
UVI
= 1.2V 1
FA
UVI Hysteresis UVH 10 20 30 mV
UVS Switch Resistance R
UVS
1100 1540 2100
I
Thermal Shutdown Temperature T
S
Temperature rising, OT output
asserted (Note 3)
155 170
NC
Thermal Shutdown Hysteresis T
H
(Note 3) 10 20
NC
OVERVOLTAGE GATE DRIVER
Overvoltage Shutdown Level V
OV
Input voltage rising, ODRV output
turns off external pMOSFET
18.7 19.2 19.7 V
Overvoltage Shutdown Level V
OV,F
Input voltage falling 18.1 V