Datasheet

LED Driver with Integrated MOSFET
for MR16 and Other 12V AC Input Lamps
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
IN, DRAIN to GND ....................................................-0.3V, +52V
EXT, COMP, REFI to GND
.......................................-0.3V, +6.0V
FB, SOURCE to GND
..............................................-0.3V, +1.5V
Maximum RMS Current, FB, SOURCE to GND
....................0.8A
Maximum RMS Current Through DRAIN and SOURCE
...... Q2A
Continuous Power Dissipation (T
A
= +70NC)
TDFN (derate 24.4mW/NC above +70NC)
..................1951mW
Any Pin to Any Pin ESD Rating
............................... ±2kV (HBM)
Operating Temperature Range
........................ -40NC to +125NC
Maximum Junction Temperature
.....................................+150NC
Storage Temperature Range
............................ -65NC to +150NC
Lead Temperature (soldering, 10s)
................................+300NC
Soldering Temperature (reflow)
......................................+260NC
ELECTRICAL CHARACTERISTICS
(V
IN
= 12V; V
EXT
= V
SOURCE
= V
FB
= V
GND
= 0V; COMP, REFI, and DRAIN = open; T
A
= T
J
= -40NC to +125NC, unless otherwise
noted. Typical values are at T
A
= +25NC.) (Note 2)
ABSOLUTE MAXIMUM RATINGS
TDFN
Junction-to-Ambient Thermal Resistance (B
JA
) ......... 41NC/W
Junction-to-Case Thermal Resistance (B
JC
) ................ 9NC/W
PACKAGE THERMAL CHARACTERISTICS (Note 1)
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Voltage Range V
IN
6.5 48 V
IN Supply Current I
IN
When MOSFET fully on 1 2
mA
When MOSFET switching, V
COMP
= 2V,
drain to 5V through 50I
1.5 3
Undervoltage Lockout UVLO
IN
IN rising 5 5.6 6.1 V
UVLO Hysteresis
200 mV
Overvoltage Protection on IN V
OVP
IN rising 43.6 46 48 V
OVP Hysteresis 1.2 V
Switching Frequency 270 300 330 kHz
Ramp P-P Voltage
2 V
FB Average Voltage
T
A
= +25NC
196 200 204
mV
-40°C P T
A
P +125NC
190 210
Transconductance g
m
550
FS
No-Load Gain A
75 dB
COMP Sink Current I
SINK
V
COMP
= 2V, V
FB
= 0.65V 150 250 350
FA
COMP Source Current I
SOURCE
V
COMP
= 2V, V
FB
= 0V 70 115 160
FA
Power Switch On-Resistance R
DSON
I
DS
= 1A 0.1 0.2
I
Switch Leakage Current I
LEAK
V
DRAIN
= 48V, V
COMP
= 0V 25
FA
DRAIN Rise Time t
RDRAIN
I
DS
= 1A 10 ns
DRAIN Fall Time t
FDRAIN
I
DS
= 1A 10 ns
SOURCE Limit Threshold V
SOURCETH
SOURCE connected to FB 0.66 0.72 0.78 V
MAX16840
2
Maxim Integrated