Datasheet

2 Maxim Integrated
Integrated, 2-Channel, High-Brightness LED Driver
with High-Voltage Boost and SEPIC Controller
MAX16838
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
IN, OUT_, DRAIN to SGND ...................................-0.3V to +45V
EN to SGND
...............................................-0.3V to (V
IN
+ 0.3V)
PGND to SGND
....................................................-0.3V to +0.3V
LEDGND to SGND
...............................................-0.3V to +0.3V
DRV to PGND
.......... -0.3V to the lower of (V
IN
+ 0.3V) and +6V
GATE to PGND
........................................................ -0.3V to +6V
NDRV to PGND
.......................................-0.3V to (V
DRV
+ 0.3V)
V
CC
, FLT, DIM, CS, OV, CFB, to SGND .................-0.3V to +6V
RT, COMP, ISET to SGND
.........................-0.3V to (V
CC
+ 0.3V)
DRAIN and CS Continuous Current
.................................. Q2.5A
OUT_ Continuous Current
................................................175mA
V
DRV
Short-Circuit Duration .....................................Continuous
Continuous Power Dissipation (T
A
= +70NC)
20-Pin TQFN (derate 25.6mW/NC above +70NC)
............2051mW
20-Pin TSSOP (derate 26.5mW/NC above +70NC)
......2122mW
Operating Temperature Range
........................ -40NC to +125NC
Junction Temperature
.....................................................+150NC
Storage Temperature Range
............................ -65NC to +150NC
Soldering Temperature (reflow)
......................................+260NC
ELECTRICAL CHARACTERISTICS
(V
IN
= V
EN
= 12V, R
RT
= 12.2kI, R
ISET
= 15kI, C
VCC
= 1FF, V
CC
= V
DRV
= V
CFB,
DRAIN, COMP, OUT_, FLT = unconnected, V
OV
= V
CS
= V
LEDGND
= V
DIM
= V
PGND
= V
SGND
= 0V, V
GATE
= V
NDRV
, T
A
= T
J
= -40NC to +125NC, unless otherwise noted. Typical
values are at T
A
= 25NC.) (Note 2)
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
20 TQFN
Juction-to-Ambient Thermal Resistance (B
JA
) .......... +39NC/W
Junction-to-Case Thermal Resistance (B
JC
) ............... +6NC/W
20 TSSOP
Junction-to-Ambient Thermal Resistance (B
JA
) ..... +37.7NC/W
Junction-to-Case Thermal Resistance (B
JC
) ............... +2NC/W
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Voltage Range V
IN
Internal LDO on 4.75 40 V
Input Voltage Range V
IN
V
IN
= V
CC
4.55 5.5 V
Quiescent Supply Current I
Q
V
DIM
= 5V 3.1 5 mA
Standby Supply Current I
SH
V
EN
= SGND (Note 3) 15.5 40 FA
Undervoltage Lockout UVLO
IN
V
IN
rising, V
DIM
= 5V 4 4.3 4.55 V
Undervoltage Lockout Hysteresis 177 mV
DRV REGULATOR
Output Voltage V
DRV
5.75V < V
IN
< 10V, 0.1mA < I
LOAD
< 30mA
4.75 5 5.25 V
6.5V < V
IN
< 40V, 0.1mA < I
LOAD
< 3mA
Dropout Voltage
V
DO
(V
IN
- V
DRV
)
V
IN
= 4.75V, I
OUT
= 30mA 0.11 0.5 V
Short-Circuit Current Limit DRV shorted to GND 97 mA
V
CC
Undervoltage Lockout
Threshold
UVLO
VCC
V
CC
rising 3.4 4.0 4.4 V
V
CC
(UVLO) Hysteresis 123 mV