Datasheet

(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Turn-Off Switch Resistance R
DS_OFF
V
IN_
- V
CSP
= -50mV, I = 50mA 0.8 Ω
Turn-On Switch Resistance R
DS_ON
V
IN_
- V
CSP_
= 120mV, I = 70mA 2 Ω
ORing MOSFET Gate Drive
(V
OG_
- V
IN_
)
V
OG_
3.75V < V
IN_
< 18V 6 11 12 V
ORing MOSFET Fast Turn-On
Threshold
V
FWD_ON
V
IN_
- V
CSP
rising 80 mV
ORing MOSFET Fast Turn-Off V
FWD_OFF
V
IN_
- V
CSP
falling, V
OG_
goes to
forward regulation
40 mV
ORing MOSFET Turn-On
Delay
t
ON_OG_
C
GATE
= 10nF, V
IN_
- V
CSP
= +0.05V 150 ns
ORing MOSFET Turn-Off
Delay
t
OFF_OG_
C
GATE
= 10nF, V
IN_
- V
CSP
= -0.05V,
V
OG_
= 0.1 x (V
CP_
- V
IN_
)
200 300 ns
PC to OG2 Delay t
LH_DLY
V
PC
falling edge to V
OG2
going high 40 65 µs
HOT SWAP
Circuit-Breaker Accuracy V
CB_TH
V
CSP
- V
CSN
V
CB
= 0V 32.9 35 37.1
mVV
CB
= Hi-Z 47.5 50 52.5
V
CB
= V
S
61.1 65 68.9
Active Current-Limit Sense
Voltage
V
ACL
1.3 x
V
CB_TH
mV
Fast Comparator Threshold V
FC_TH
V
CSP
- V
CSN
3 x
V
CB_TH
mV
Fast Comparator Response
Time
t
FC_DLY
V
CSP
- V
CSN
= 300mV, C
GATE
= 10nF
(Note 3)
200 ns
GATE Off Delay t
OFF_GATE
V
EN
high to V
GATE
low 20 40
µs
V
ON
low to V
GATE
low 10 20
GATE Propagation Delay t
ON_GATE_PD
V
ON
= step 0.8V to 2V 10 20 µs
GATE Drive Voltage
(V
GATE
- V
OUT
)
V
GATE
3.7V < V
IN_
< 18V 6 11 V
GATE Pullup Current I
GATE_ON
V
GATE
- V
OUT
= 0V -13 -10 -7 µA
GATE Pulldown Current
(Timeout)
I
GATE_OFF
V
OUT
= 12V, V
GATE
= V
OUT
+ 5V 350 500 650 µA
GATE Fast Pulldown Current
I
GATE_FAST_
OFF
V
OUT
= 12V, V
GATE
= V
OUT
+ 5V 75 200 260 mA
HOT-SWAP FOLDBACK
Minimum CB Voltage V
CB_FBMAX
(V
CSP
- V
CSN
) = 12V 3 8.33 15
%
V
CB_TH
Minimum FB Voltage V
FBMIN
V
CSP
- V
OUT,
at V
CB
= V
CB_FBMAX
1 2 3.2 V
MAX15068 Dual ORing, Single Hot-Swap Controller with
Accurate Current Monitoring
www.maximintegrated.com
Maxim Integrated │ 3
Electrical Characteristics (continued)