Datasheet

IN1, IN2 to GND .......................................................-1V to +24V
PG, EN, FAULT, CSN to GND ..............................-0.3V to +24V
CSP to GND .............................................-0.3V to (V
IN_
+ 0.6V)
V
S
to GND ............................................................... -0.3V to +6V
ON, PC, IPMON, CB, CDLY to GND ..........-0.3V to (V
S
+ 0.3V)
CSP to CSN .........................................................-0.3V to +0.3V
OUT to GND .......................................................... -0.3V to +24V
GATE to GND ........................................................ -0.3V to +36V
GATE to OUT ........................................................-0.3V to +20V
CP1 to GND ..........................................................-0.3V to +36V
CP1 to IN1 ............................................................. -0.3V to +14V
CP2 to GND ..........................................................-0.3V to +36V
CP2 to IN2 ............................................................. -0.3V to +14V
OG1 .............................................(V
IN1
- 0.3V) to (V
CP1
+ 0.3V)
OG2 .............................................(V
IN2
- 0.3V) to (V
CP2
+ 0.3V)
Current into EN, PG, FAULT ..............................................20mA
Continuous Power Dissipation (T
A
= +70°C)
20-TQFN (derate 30mW/ºC above +70°C) ...................2400mW
Operating Temperature Range ......................... -40°C to +125°C
Junction Temperature ...................................................... +150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) ....................................... +260°C
TQFN
Junction-to-Ambient Thermal Resistance (θ
JA
) .......33.5°C/W
(Note 1)
(V
IN1
= V
IN2
= 12V, C
IN1
= C
IN2
= C
VS
= 1µF, T
A
= -40°C to +125°C. Typical values are at T
A
= +25°C, unless otherwise noted.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
SUPPLY VOLTAGE
Input Supply Voltage V
IN
Hot swap and ORing 3.7 18
V
Current monitor 4.8 18
Input Supply Current I
IN
4 mA
Internal LDO Output Voltage V
S
4.8 5 5.25 V
V
S
Undervoltage Lockout V
UVLO
V
S
rising 2.5 2.65 2.8 V
V
S
Undervoltage-Lockout
Hysteresis
V
UVLO_HYS
0.07 V
CSP Undervoltage Lockout V
CSP_UVLO
V
CSP
rising 2.4 2.49 2.58
V
V
CSP
falling 2.25 2.35 2.42
ORING
ORing MOSFET Forward
Regulation Voltage
(V
IN_
- V
CSP
)
V
FWD_REG
7.5 10 12.5 mV
ORing MOSFET Reverse Bias
Turn-Off Voltage
V
REV_OFF
V
IN_
- V
CSP
, V
CSP
rising
(V
CSP
> V
IN_
), V
OG_
goes low
-12.5 -10 -7.5 mV
ORing MOSFET Reverse Bias
Turn-On Voltage
V
REV_ON
V
IN_
- V
CSP
, V
CSP
falling
(V
IN_
> V
CSP_
), V
OG_
goes to
forward regulation
+8.5 +10 +13.5 mV
ORing MOSFET Reverse Bias
Hysteresis Voltage
V
REV_HYS
V
REV_OFF
- V
REV_ON
20 mV
MAX15068 Dual ORing, Single Hot-Swap Controller with
Accurate Current Monitoring
www.maximintegrated.com
Maxim Integrated │ 2
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
Electrical Characteristics