Datasheet
MAX15035
15A Step-Down Regulator with Internal Switches
_______________________________________________________________________________________ 5
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V
IN
= 12V, V
DD
= V
CC
= V
EN
= 5V, REFIN = ILIM = REF, SKIP = GND. T
A
= -40°C to +85°C, unless otherwise
specified.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN MAX UNITS
REFERENCE
Reference Voltage V
REF
V
DD
= 4.5V to 5.5V 1.985 2.015 V
FAULT DETECTION
Output Overvoltage-Protection
Trip Threshold
OVP
With respect to the internal target voltage
(error comparator threshold) rising edge;
hysteresis = 50mV
250 350 mV
Output Undervoltage-Protection
Trip Threshold
UVP
With respect to the internal target voltage
(error comparator threshold);
falling edge; hysteresis = 50mV
-240 -160 mV
Output Undervoltage
Fault-Propagation Delay
t
UVP
FB forced 25mV below trip threshold 80 400 μs
PGOOD Output-Low Voltage I
SINK
= 3mA 0.4 V
V
CC
Undervoltage Lockout
Threshold
V
U V L O
(
V C C
)
Ri si ng ed g e, P W M d i sab l ed b el ow thi s l evel ,
hyster esi s = 100m V
3.95 4.45 V
CURRENT LIMIT
ILIM Input Range 0.4 V
REF
V
V
ILIM
= 0.4V, V
GND
= V
LX
17 23
Current-Limit Threshold V
ILIMIT
ILIM = REF (2.0V), V
GND
- V
LX
90 110
mV
Ultrasonic Frequency SKIP = open (3.3V), V
FB
= V
REFIN
+ 50mV 17 kHz
INPUTS AND OUTPUTS
EN Logic-Input Threshold V
EN
EN rising edge hysteresis = 450mV (typ) 1.20 2.20 V
High (5V V
DD
)
V
CC
-
0.4
Mid (3.3V) 3.0 3.6
Ref (2.0V) 1.7 2.3
SKIP Quad-Level Input
Logic Levels
V
SKIP
Low (GND) 0.4
V
Note 1: Limits are 100% production tested at T
A
= +25°C. Maximum and minimum limits over temperature are guaranteed by
design and characterization.
Note 2: The 0 to 0.5V range is guaranteed by design, not production tested.
Note 3: On-time and off-time specifications are measured from 50% point to 50% point at the unloaded LX node. The typical 25ns
dead time that occurs between the high-side driver falling edge (high-side MOSFET turn-off) and the low-side MOSFET turn-
on) is included in the on-time measurement. Similarly, the typical 25ns dead time that occurs between the low-side driver
falling edge (low-side MOSFET turn-off) and the high-side driver rising edge (high-side MOSFET turn-on) is included in the
off-time measurement.