Datasheet

MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
=
V
BST
= +12V and T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
IN_L
= V
DD
for MAX15012B/MAX15012D/
MAX15013B/MAX15013D
V
IN_H
= 0V
Logic-Input Current I
_IN
V
IN_L
= 0V for MAX15012A/MAX15012C/
MAX15013A/MAX15013C
-1
+0.001
+1 µA
IN_H to GND
IN_L to V
DD
for MAX15012B/MAX15012D/
MAX15013B/MAX15013D
Input Resistance R
IN
IN_L to GND for MAX15012A/MAX15012C/
MAX15013A/MAX15013C
1MΩ
Input Capacitance C
IN
2.5 pF
HIGH-SIDE GATE DRIVER
HS Maximum Voltage
V
HS_MAX
V
DD
10.5V (Note 4)
175
V
BST Maximum Voltage
V
BST_MAX
V
DD
10.5V (Note 4)
189
V
T
A
= +25°C 2.5 3.3
Driver Output Resistance
(Sourcing)
R
ON_HP
V
DD
= 12V, I
DH
= 100mA
(sourcing)
T
A
= +125°C 3.5 4.6
Ω
T
A
= +25°C 2.1 2.8
Driver Output Resistance
(Sinking)
R
ON_HN
V
DD
= 12V, I
DH
= 100mA
(sinking)
T
A
= +125°C 3.2 4.2
Ω
DH Reverse Current (Latchup
Protection)
(Note 5)
400
mA
Power-Off Pulldown Clamp
Voltage
V
BST
= 0V or floating, I
DH
= 1mA (sinking) 0.94 1.16
V
Peak Output Current (Sourcing) C
L
= 10nF, V
DH
= 0V 2 A
Peak Output Current (Sinking)
I
DH_PEAK
C
L
= 10nF, V
DH
= 12V 2 A
LOW-SIDE GATE DRIVER
T
A
= +25°C 2.5 3.3
Driver Output Resistance
(Sourcing)
R
ON_LP
V
DD
= 12V, I
DL
= 100mA
(sourcing)
T
A
= +125°C 3.5 4.6
Ω
T
A
= +25°C 2.1 2.8
Driver Output Resistance
(Sinking)
R
ON_LN
V
DD
= 12V, I
DL
= 100mA
(sinking)
T
A
= +125°C 3.2 4.2
Ω
Reverse Current at DL (Latchup
Protection)
(Note 5)
400
mA
Power-Off Pulldown Clamp
Voltage
V
DD
= 0V or floating, I
DL
= 1mA (sinking)
0.95 1.16
V
Peak Output Current (Sourcing) I
PK_LP
C
L
= 10nF, V
DL
= 0V 2 A
Peak Output Current (Sinking) I
PK_LN
C
L
= 10nF, V
DL
= 12V 2 A
Forward Voltage Drop V
F
I
BST
= 100mA
0.91 1.11
V
Turn-On and Turn-Off Time t
R
I
BST
= 100mA 40 ns