Datasheet

MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
_______________________________________________________________________________________ 5
UNDERVOLTAGE LOCKOUT
(V
DD
AND V
BST
RISING) vs. TEMPERATURE
MAX15012/13 toc01
TEMPERATURE (°C)
UVLO (V)
1109565 80-10 5 20 35 50-25
6.6
6.7
6.8
6.9
7.0
7.1
7.2
7.3
7.4
7.5
6.5
-40 125
UVLO
VDD
UVLO
BST
V
DD
AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS vs. TEMPERATURE
MAX15012/13 toc02
TEMPERATURE (°C)
UVLO HYSTERESIS (V)
1109565 80-10 5 20 35 50-25
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
-40 125
UVLO
BST
HYSTERESIS
UVLO
VDD
HYSTERESIS
I
DD
vs. V
DD
MAX15012/13 toc03
4ms/div
V
DD
2V/div
I
DD
50μA/div
0μA
0V
IN_H = GND
IN_L = V
DD
I
DDO
+ I
BSTO
vs. V
DD
(f
SW
= 250kHz)
MAX15012/13 toc04
V
DD
(V)
I
DDO
+
I
BSTO
(mA)
1210 11345678912
1.0
0.8
0.6
0.4
0.2
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0
013
0
60
40
20
80
100
120
140
160
180
200
0.5 0.70.6 0.8 0.9 1.0 1.1
INTERNAL BST DIODE
(I-V) CHARACTERISTICS
MAX15012/13 toc05
V
DD
- V
BST
(V)
I
DIODE
(mA)
T
A
= +125°C
T
A
= +25°C
T
A
= 0°C
T
A
= -40°C
0
60
40
20
80
100
120
140
160
0426
8
10 12
V
DD
QUIESCENT CURRENT
vs. V
DD
(NO SWITCHING)
MAX15012/13 toc06
V
DD
(V)
I
DD
(μA)
T
A
= -40°C
T
A
= +25°C
V
DD
= V
BST
V
HS
= GND
IN_H = GND
IN_L = V
DD
T
A
= +125°C
0
6
3
9
12
15
18
21
0426810153 7 9 1112131415
BST QUIESCENT CURRENT
vs. BST VOLTAGE
MAX15012/13 toc07
V
BST
(V)
I
BST
(μA)
V
BST
= V
DD
+ 1V,
NO SWITCHING
T
A
= +125°C
T
A
= -40°C, T
A
= 0°C, T
A
= +25°C
Typical Operating Characteristics
(Typical values are at V
DD
= V
BST
= +12V and T
A
= +25°C, unless otherwise specified.)