Datasheet

MAX1184
Dual 10-Bit, 20Msps, 3V, Low-Power ADC with
Internal Reference and Parallel Outputs
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 3V, OV
DD
= 2.5V, 0.1µF and 1.0µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a
10kΩ resistor, V
IN
= 2V
P-P
(differential with respect to. COM), C
L
= 10pF at digital outputs (Note 1), f
CLK
= 20MHz, T
A
= T
MIN
to
T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Maximum REFP, COM Source
Current
I
SOURCE
5mA
Maximum REFP, COM Sink
Current
I
SINK
-250 µA
Maximum REFN Source Current I
SOURCE
250 µA
Maximum REFN Sink Current I
SINK
-5 mA
UNBUFFERED EXTERNAL REFERENCE (V
REFIN
= AGND, reference voltage applied to REFP, REFN, and COM)
REFP, REFN Input Resistance
R
REFP
,
R
REFN
Measured between REFP and COM, and
REFN and COM
4kΩ
Differential Reference Input
Voltage
∆V
REF
∆V
REF
= V
REFP
- V
REFP
1.024
±10%
V
COM Input Voltage V
COM
V
DD
/2
±10%
V
REFP Input Voltage V
REFP
V
C OM
+
∆V
RE F
/ 2
V
REFN Input Voltage V
REFN
V
C OM
-
∆V
RE F
/ 2
V
DIGITAL INPUTS (CLK, PD, OE, SLEEP, T/B))
CLK 0.8 x V
DD
Input High Threshold V
IH
PD, OE, SLEEP, T/B 0.8 x OV
DD
V
CLK 0.2 x V
DD
Input Low Threshold V
IL
PD, OE, SLEEP, T/B 0.2 x OV
DD
V
Input Hysteresis V
HYST
0.1 V
I
IH
V
IH
= OV
DD
or V
DD
(CLK) ±5
Input Leakage
I
IL
V
IL
= 0V ±5
µA
Input Capacitance C
IN
5pF
DIGITAL OUTPUTS (D9A–D0A, D9B–D0B)
Output Voltage Low V
OL
I
SINK
= 200µA 0.2 V
Output Voltage High V
OH
I
SOURCE
= 200µA OV
DD
- 0.2 V
Three-State Leakage Current I
LEAK
OE = OV
DD
±10 µA
Three-State Output Capacitance C
OUT
OE = OV
DD
5pF