Datasheet

MAX11100
16-Bit, +5V, 200ksps ADC with 10µA Shutdown
2Maxim Integrated
AVDD to AGND .......................................................-0.3V to +6V
DVDD to DGND ....................................................... -0.3V to +6V
DGND to AGND ...................................................-0.3V to +0.3V
AIN, REF to AGND ............................... -0.3V to (V
AVDD
+ 0.3V)
SCLK, CS to DGND .................................................-0.3V to +6V
DOUT to DGND .................................... -0.3V to (V
DVDD
+ 0.3V)
Maximum Current Into Any Pin ....................................... Q50mA
Continuous Power Dissipation (T
A
= +70NC)
FMAX (derate 5.6mW/NC above +70NC) .....................444mW
WLP (derate 16.1mW/NC above +70NC)......1300mW (Note 1)
Operating Temperature Range .......................... -40NC to +85NC
Maximum Junction Temperature .....................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (FMAX only; soldering, 10s) .............+300NC
Soldering Temperature (reflow) ......................................+260NC
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
AVDD
= V
DVDD
= 4.75V to 5.25V, f
SCLK
= 4.8MHz (50% duty cycle), 24 clocks/conversion (200ksps), V
REF
= 4.096V, C
REF
= 4.7FF,
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25NC.)
Note 1: All WLP devices are 100% production tested at T
A
= +25NC. Specifications over temperature limits are guaranteed by
design and characterization.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
DC ACCURACY (Note 2)
Resolution 16 Bits
Relative Accuracy INL (Note 3) -2 +2 LSB
Differential Nonlinearity DNL -1 +2 LSB
Transition Noise RMS noise
Q0.65
LSB
RMS
Offset Error 0.1 1 mV
Gain Error (Note 4)
Q0.002 Q0.01
%FSR
Offset Drift 0.4 ppm/°C
Gain Drift (Note 4) 0.2 ppm/°C
DYNAMIC SPECIFICATIONS (1kHz sine wave, 4.096V
P-P
) (Note 2)
Signal-to-Noise Plus Distortion SINAD 86 91.5 dB
Signal-to-Noise Ratio SNR 87 91.7 dB
Total Harmonic Distortion THD -106 -90 dB
Spurious-Free Dynamic Range SFDR 92 108 dB
Full-Power Bandwidth -3dB point 4 MHz
Full-Linear Bandwidth SINAD > 86dB 10 kHz
CONVERSION RATE
Conversion Time t
CONV
(Note 5) 5 240
Fs
Serial Clock Frequency f
SCLK
0.1 4.8 MHz
Aperture Delay t
AD
15 ns
Aperture Jitter t
AJ
< 50 ps
Sample Rate f
S
f
SCLK
/24 200 ksps
Track/Hold Acquisition Time t
ACQ
1.1
Fs