Datasheet

MAX11014/MAX11015
Automatic RF MESFET Amplifier
Drain-Current Controllers
_______________________________________________________________________________________ 3
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
CLASS AB OUTPUT CHANNEL
Untrimmed Offset (Note 1) 50 μV
Offset Temperature Coefficient 0 mV/
o
C
Gain -2
Gain Error 0.1 %
GATE-DRIVE AMPLIFIER/INTEGRATOR
I
GATE
= -1mA
V
GATEVSS
+ 1
V
I
GATE
= +1mA -0.15 -4 mV
I
GATE
= -10mA
V
GATEVSS
+ 1.2
V
Output Gate-Drive Voltage Range
(Note 2)
V
GATE
I
GATE
= +10mA -1 -20 mV
Gate Voltage Settling Time—
MAX11015
t
GATE
Settles to within ±0.5% of final value, R
S
= 50 , C
GATE
= 15μF, see GATE Output
Resistance vs. GATE Voltage in the
Typical Operating Characteristics
1.1 ms
No series resistance, R
S
= 0 0 0.5
Output Capacitive Load (Note 3) C
GATE
R
S
= 500 0
15,000
nF
Gate Voltage Noise RMS noise, 1kHz to 1MHz 250 nV/Hz
Maximum Power-On Transient C
LOAD
= 1nF ±100 mV
Output Short-Circuit Current Limit I
SC
Sinking or sourcing ±25 mA
Output Safe Switch On-
Resistance
R
OPSW
Clamp GATE1 to ACLAMP1, GATE2 to
ACLAMP2 (Note 4)
3.6 k
ADC DC ACCURACY
Resolution 12 Bits
Differential Nonlinearity DNL
ADC
±2 LSB
Integral Nonlinearity INL
ADC
(Note 5) ±2 LSB
Offset Error ±2 ±4 LSB
Gain Error (Note 6) ±2 ±4 LSB
Gain Temperature Coefficient ±0.4 ppm/
o
C
Offset Temperature Coefficient ±0.4 ppm/
o
C
Channel-to-Channel Offset
Matching
±0.1 LSB
Channel-to-Channel Gain
Matching
±0.1 LSB
ELECTRICAL CHARACTERISTICS (continued)
(V
GATEVSS
= V
AVSS
= -5.5V to -4.75V, V
AVDD
= +4.75V to +5.25V, V
DVDD
= +2.7V to V
AVDD
, external V
REFADC
= +2.5V, external
V
REFDAC
= +2.5V, C
REFADC
= C
REFDAC
= 0.1µF, V
OPSAFE1
= V
OPSAFE2
= 0, V
RCS1+
= V
RCS2+
= +5V, C
FILT1
= C
FILT3
= 1nF, C
FILT2
=
C
FILT4
= 1nF, V
AGND
= V
DGND
= 0, V
ADCIN0
= V
ADCIN1
= 0, V
ACLAMP1
= V
ACLAMP2
= -5V, T
J
= T
MIN
to T
MAX
, unless otherwise noted.
All typical values are at T
J
= +25°C.)