Datasheet

Voltage on HVD, MIRIN, MIRCAP, and MIROUT
Relative to HVGND ..........................................-0.3V to +79V
Voltage on V
CC
and AVCC to GND ....................-0.3V to + 4.3V
Voltage on All Other Pins Relative
to GND ...................-0.3V to (V
CC
+ 0.3V) Not to Exceed +4V
Continuous Power Dissipation (T
A
= +70°C)
TQFN (derate 15.4mW/°C above +70°C)...............1228.9mW
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Electrical Characteristics
(V
MIRIN
= 15V to 76V, V
CC
= 2.85V to 3.63V, T
A
= -40°C to +95°C, unless otherwise noted.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Low Voltage Supply V
CC
2.85 3.63 V
Low Voltage Current I
CC
(Note 2) 8 16 mA
MIRIN Quiescent Current I
MIRIN
V
MIRIN
= 60V,
ISRC/SHDN =
30kΩ to GND
I
MIROUT
= 0µA 1 2
mA
I
MIROUT
= 1mA 3.2 4
MIRIN Voltage V
MIRIN
15 76 V
HV FET On-Resistance R
DSONHV
V
GS
= 3.0V, I
D
= 170mA 0.85 2
HVG Voltage V
GSHV
0
V
CC
+
0.3
V
HVD Voltage V
DHV
76 V
HVD Leakage I
ILHV
-1 +1 µA
Logic-Input Thresholds (DIFFEN,
DISCHARGE, GAIN, HVG, SEN,
SENXOR)
V
IL
0.3 x
V
CC
V
V
IH
0.7 x
V
CC
ISRC/SHDN Threshold
V
IL_SHDN
1.4
V
V
IH_SHDN
V
CC
-
0.2
ISRC/SHDN Resistor R
ISRC
(Note 3 29.7 30 30.3 kΩ
Maximum MIROUT Current I
CLAMP
ISRC/SHDN =
low
R
LIM
= 40.2kΩ 1.4 2 2.8
mAR
LIM
= 24.9kΩ 2.5 3.2 4.1
ISRC/SHDN = high 0.01
MIROUT Capacitive Load C
MIROUT
Total capacitance on MIROUT to
achieve accuracy specication
330 500 pF
Logic Output Levels (ILIMS)
V
OL_ILIMS
I
ILIMS
= -2mA 0.45
V
V
OH_ILIMS
I
ILIMS
= +2mA
V
CC
-0.45
DS3923 High-Speed Current Mirror
with Sample/Hold Output
www.maximintegrated.com
Maxim Integrated
2
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.