Datasheet

DS3906
Triple NV Low Step Size Variable
Resistor Plus Memory
6 _____________________________________________________________________
Typical Operating Characteristics (continued)
(V
CC
= +5.0V, T
A
= +25°C, unless otherwise noted.)
R
2
RESISTANCE AT POSITION 1Fh
vs. POWER-UP VOLTAGE
DS3906 toc16
POWER-DOWN VOLTAGE (V)
R
2
RESISTANCE AT POSITION 1Fh (Ω)
2
1
43
500
1000
1500
2000
2500
3000
3500
4000
0
50
>5.5M
Ω
RESISTOR R
2
PROGRAMMED
VALUE
EEPROM
RECALL
INL vs. RESISTOR SETTING FOR
(R
0
 R
EXT
)
DS3906 toc17
RESISTOR SETTING (dec)
INL (LSB)
50
30 40
10 20
-1.5
-1.0
-0.5
0
0.5
1.0
1.5
2.0
-2.0
060
(R
0
 R
EXT
)
R
EXT
= 87
Ω
DNL vs. RESISTOR SETTING FOR
(R
0
 R
EXT
)
DS3906 toc18
RESISTOR SETTING (dec)
DNL (LSB)
50 60
30
40
10
20
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1.0
-1.0
0
(R
0
 R
EXT
)
R
EXT
= 87
Ω
INL vs. RESISTOR SETTING FOR
(R
1
 R
EXT
)
DS3906 toc19
RESISTOR SETTING (dec)
INL (LSB)
50
4010 20
30
-1.5
-1.0
-0.5
0
0.5
1.0
1.5
2.0
-2.0
060
(R
1
 R
EXT
)
R
EXT
= 87
Ω
DNL vs. RESISTOR SETTING FOR
(R
1
 R
EXT
)
DS3906 toc20
RESISTOR SETTING (dec)
DNL (LSB)
50 6020 30 40
10
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1.0
-1.0
0
(R
1
 R
EXT
)
R
EXT
= 87
Ω
INL vs. RESISTOR SETTING FOR
(R
2
 R
EXT
)
DS3906 toc21
RESISTOR SETTING (dec)
INL (LSB)
50
30
40
10
20
-1.5
-1.0
-0.5
0
0.5
1.0
1.5
2.0
-2.0
060
(R
2
 R
EXT
)
R
EXT
= 258
Ω
DNL vs. RESISTOR SETTING FOR
(R
2
 R
EXT
)
DS3906 toc22
RESISTOR SETTING (dec)
DNL (LSB)
50
60
40
10 20
30
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1.0
-1.0
0
(R
2
 R
EXT
)
R
EXT
= 258
Ω