Datasheet

Extremely Accurate I
2
C RTC with
Integrated Crystal and SRAM
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 2.3V to 5.5V, V
CC
= active supply (see Table 1), T
A
= -40°C to +85°C, unless otherwise noted.) (Typical values are at V
CC
=
3.3V, V
BAT
= 3.0V, and T
A
= +25°C, unless otherwise noted.) (Notes 2, 3)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Logic 0 Output, INT/SQW, SDA V
OL
I
OL
= 3mA 0.4 V
Logic 0 Output, RST, 32kHz V
OL
I
OL
= 1mA 0.4 V
Output Leakage Current 32kHz,
INT/SQW, SDA
I
LO
Output high impedance -1 0 +1 µA
Input Leakage SCL I
LI
-1 +1 µA
RST Pin I/O Leakage I
OL
RST high impedance (Note 6) -200 +10 µA
TCXO
Output Frequency f
OUT
V
CC
= 3.3V or V
BAT
= 3.3V 32.768 kHz
Duty Cycle
(Revision A3 Devices)
2.97V ≤ V
CC
< 3.63 31 69 %
0°C to +40°C -2 +2
Frequency Stability vs.
Temperature
Δf/f
OUT
V
CC
= 3.3V or
V
BAT
= 3.3V
- 40° C to 0°C and
+ 40° C to + 85°C
-3.5 +3.5
ppm
Frequency Stability vs. Voltage Δf/V V
CC
= 3.3V or V
BAT
= 3.3V 1 ppm/V
-40°C 0.7
+25°C 0.1
+70°C 0.4
Trim Register Frequency
Sensitivity per LSB
Δf/LSB Specified at:
+85°C 0.8
ppm
Temperature Accuracy Temp V
CC
= 3.3V or V
BAT
= 3.3V -3 +3 °C
First year ±1.0
Crystal Aging Δf/f
0
After reflow,
not production tested
0–10 years ±5.0
ppm
ELECTRICAL CHARACTERISTICS
(V
CC
= 0V, V
BAT
= 2.3V to 5.5V, T
A
= -40°C to +85°C, unless otherwise noted.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
V
BAT
= 3.3V 80
Active Battery Current
(Note 5)
I
BATA
EO SC = 0, BBS Q W = 0,
S C L = 400kH z, BB32kH z = 0
V
BAT
= 5.5V 200
µA
V
BAT
= 3.4V 1.5 2.5
Timekeeping Battery Current
(Note 5)
I
BATT
EOSC = 0, BBSQW = 0,
SCL = SDA = 0V,
BB32kHz = 0,
CRATE0 = CRATE1 = 0
V
BAT
= 5.5V 1.5 3.0
µA
Temperature Conversion Current I
BATTC
EOSC = 0, BBSQW = 0, SCL = SDA = 0V 600 µA
Data-Retention Current I
BATTDR
EOSC = 1, SCL = SDA = 0V, +25°C 100 nA
DS3232
3
Maxim Integrated