Datasheet

DS28EC20: 20Kb 1-Wire EEPROM
4 of 27
3.3V SUPPLY ELECTRICAL CHARACTERISTICS
(V
PUP
= 3.3V ±5%, T
A
= 0°C to +70°C, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I/O PIN GENERAL DATA
1-Wire Pullup Resistance
R
PUP
(Notes 1, 2)
0.3
2.2
k
Ω
Input Capacitance
C
IO
(Notes 3, 4)
2000
pF
Input Load Current
I
L
I/O pin at V
PUP
0.05
3.5
µA
High-to-Low Switching
Threshold
V
TL
(Notes 4, 5, 6) 0.49
V
PUP
-
1.9
V
Input Low Voltage
V
IL
(Notes 1, 7)
0.5
V
Low-to-High Switching
Threshold
V
TH
(Notes 4, 5, 8) 1.09
V
PUP
-
1.1
V
Switching Hysteresis
V
HY
(Notes 4, 5, 9)
0.33
0.70
V
Output Low Voltage
V
OL
At 4mA (Note 10)
0.30
V
Recovery Time
t
REC
Standard speed (Notes 1, 11)
5
µs
Rising-Edge Hold-off Time
t
REH
Standard speed (Notes 4, 12)
0.5
5.0
µs
Timeslot Duration
t
SLOT
Standard speed (Notes 1, 13)
65
µs
I/O PIN, 1-Wire RESET, PRESENCE DETECT CYCLE
Reset-Low Time
t
RSTL
Standard speed (Note 1)
480
640
µs
Presence-Detect High
Time
t
PDH
Standard speed 15 60 µs
Presence-Detect Low
Time
t
PDL
Standard speed 60 240 µs
Presence-Detect Sample
Time
t
MSP
Standard speed (Notes 1, 14) 60 75 µs
I/O PIN, 1-Wire WRITE
Write-0 Low Time
t
W0L
Standard speed (Notes 1, 15)
60
120
µs
Write-1 Low Time
t
W1L
Standard speed (Notes 1, 15)
1
15
µs
I/O PIN, 1-Wire READ
Read-Low Time
t
RL
Standard speed (Notes 1, 16)
5
15 -
δ
µs
Read-Sample Time
t
MSR
Standard speed (Notes 1, 16)
t
RL
+
δ
15
µs
EEPROM
Programming Current
I
PROG
(Note 17)
0.9
mA
Programming Time
t
PROG
(Note 18)
10
ms
Write/Erase Cycles (Endu-
rance) (Notes 19, 20)
N
CY
At +25°C
200k

At +70°C
50k
Data Retention
t
DR
(Notes 21, 22, 23)
40
years