Information

DS28E25
DeepCover Secure Authenticator with
1-Wire SHA-256 and 4Kb User EEPROM
2Maxim Integrated
IO Voltage Range to GND ...................................... -0.5V to 4.0V
IO Sink Current
...................................................................20mA
Operating Temperature Range
......................... -40NC to +85NC
Junction Temperature
.....................................................+150NC
Storage Temperature Range
............................ -55NC to +125NC
Lead Temperature (soldering, 10s)
TO-92, TSOC, TDFN
...................................................+300NC
Soldering Temperature (reflow)
TO-92
..........................................................................+250NC
TSOC, TDFN
...............................................................+260NC
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= -40NC to +85NC, unless otherwise noted.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
IO PIN: GENERAL DATA
1-Wire Pullup Voltage V
PUP
(Note 2) 2.97 3.63 V
1-Wire Pullup Resistance R
PUP
V
PUP
= 3.3V Q 10% (Note 3)
300 1500
I
Input Capacitance C
IO
(Notes 4, 5) 1500 pF
Input Load Current I
L
IO pin at V
PUP
5 19.5
FA
High-to-Low Switching Threshold V
TL
(Notes 6, 7) 0.65 x V
PUP
V
Input Low Voltage V
IL
(Notes 2, 8) 0.3 V
Low-to-High Switching Threshold V
TH
(Notes 6, 9) 0.75 x V
PUP
V
Switching Hysteresis V
HY
(Notes 6, 10) 0.3 V
Output Low Voltage V
OL
I
OL
= 4mA (Note 11) 0.4 V
Recovery Time t
REC
R
PUP
= 1500I (Notes 2, 12)
5
Fs
Time-Slot Duration t
SLOT
(Notes 2, 13) 13
Fs
IO PIN: 1-Wire RESET, PRESENCE-DETECT CYCLE
Reset Low Time t
RSTL
(Note 2) 48 80
Fs
Reset High Time t
RSTH
(Note 14) 48
Fs
Presence-Detect Sample Time t
MSP
(Notes 2, 15) 8 10
Fs
IO PIN: 1-Wire WRITE
Write-Zero Low Time t
W0L
(Notes 2, 16) 8 16
Fs
Write-One Low Time t
W1L
(Notes 2, 16) 1 2
Fs
IO PIN: 1-Wire READ
Read Low Time t
RL
(Notes 2, 17) 1
2 - d
Fs
Read Sample Time t
MSR
(Notes 2, 17)
t
RL
+ d
2
Fs
EEPROM
Programming Current I
PROG
V
PUP
= 3.63V (Notes 5, 18) 1 mA
Programming Time for a 32-Bit
Segment or Page Protection
t
PRD
Refer to the full data sheet.
ms
Programming Time for the Secret t
PRS
ms
Write/Erase Cycling Endurance N
CY
T
A
= +85NC (Notes 21, 22)
100k —
Data Retention t
DR
T
A
= +85NC (Notes 23, 24, 25)
10 Years
ABRIDGED DATA SHEET