Datasheet

DS28E05 1-Wire EEPROM
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Maxim Integrated │ 2
Electrical Characteristics
(T
A
=-40°Cto+85°C,unlessotherwisenoted.)(Note1)
IOVoltageRangetoGND ......................................-0.5Vto4.0V
IOSinkCurrent.................................................................±20mA
Operating Temperature Range
.......................... -40°Cto+85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range
............................ -55°Cto+125°C
LeadTemperature(soldering,10s) .................................+300°C
Soldering Temperature (reflow)
...................................... +260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
IO PIN: GENERAL DATA
1-WirePullupVoltage V
PUP
(Note2) 2.75 3.63 V
1-Wire Pullup Resistance R
PUP
V
PUP
=3.3V±10%(Note3) 300 1500 Ω
InputCapacitance C
IO
(Notes4,5) 1500 pF
InputLoadCurrent I
L
IOpinatV
PUP
5 20 µA
High-to-LowSwitchingThreshold V
TL
(Notes6,7)
0.65 x
V
PUP
V
InputLowVoltage V
IL
(Notes2,8) 0.5 V
Low-to-HighSwitchingThreshold V
TH
(Notes6,9)
0.75 x
V
PUP
V
SwitchingHysteresis V
HY
(Notes6,10) 0.3 V
OutputLowVoltage V
OL
I
OL
=4mA(Note11) 0.4 V
Recovery Time t
REC
R
PUP
=1500Ω(Notes2,12) 5 µs
Time Slot Duration t
SLOT
(Notes2,13) 13 µs
IO PIN: 1-Wire RESET, PRESENCE DETECT CYCLE
Reset Low Time t
RSTL
(Note2) 48 80 µs
ResetHighTime t
RSTH
(Note14) 48 µs
Presence Detect Sample Time t
MSP
(Notes2,15) 8 10 µs
IO PIN: 1-Wire WRITE
Write-Zero Low Time t
W0L
(Notes2,16) 8 16 µs
Write-One Low Time t
W1L
(Notes2,16) 1 2 µs
IO PIN: 1-Wire READ
Read Low Time t
RL
(Notes2,17) 1 2-δ µs
Read Sample Time t
MSR
(Notes2,17) t
RL
+δ 2 µs
EEPROM
ProgrammingCurrent I
PROG
V
PUP
=3.63V(Notes5,18) 400 µA
ProgrammingTimefora16-Bit
Segment
t
PROG
(Note19) 16 ms
Write/EraseCyclingEndurance N
CY
T
A
=+85°C(Notes20,21)
1000 —
Data Retention t
DR
T
A
=+85°C(Notes22,23,24)
10 Years