Datasheet

DS2786 Stand-Alone OCV-Based Fuel Gauge
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Table 3. Memory Map
ADDRESS (HEX) DESCRIPTION READ/WRITE
00h Reserved —
01h Status/Config Register R/W
02h Relative Capacity R
03h to 07h Reserved —
08h Auxiliary Input 0 MSB R
09h Auxiliary Input 0 LSB R
0Ah Auxiliary Input 1 / Temperature MSB R
0Bh Auxiliary Input 1 / Temperature LSB R
0Ch Voltage Register MSB R
0Dh Voltage Register LSB R
0Eh Current Register MSB R
0Fh Current Register LSB R
10h to 13h Reserved —
14h Initial Voltage MSB R
15h Initial Voltage LSB R
16h Last OCV Relative Capacity R
17h Learned Capacity Scaling Factor R
18h to 5Fh Reserved —
60h to 7Fh Parameter EEPROM R/W
80h to FDh Reserved —
Feh Command R/W
FFh Reserved —
Table 4. Parameter EEPROM Memory Block
ADDRESS DESCRIPTION
FACTORY
VALUE
ADDRESS DESCRIPTION
FACTORY
VALUE
60h Current Offset Bias Register 00h 70h Voltage Breakpoint 4 MSB C4h
61h Capacity 1 0Ah 71h Voltage Breakpoint 4 LSB 20h
62h Capacity 2 14h 72h Voltage Breakpoint 5 MSB CDh
63h Capacity 3 32h 73h Voltage Breakpoint 5 LSB 10h
64h Capacity 4 69h 74h Voltage Breakpoint 6 MSB Ceh
65h Capacity 5 A0h 75h Voltage Breakpoint 6 LSB F0h
66h Capacity 6 Aah 76h Voltage Breakpoint 7 MSB D1h
67h Capacity 7 B5h 77h Voltage Breakpoint 7 LSB 40h
68h Voltage Breakpoint 0 MSB A3h 78h Voltage Breakpoint 8 MSB D5h
69h Voltage Breakpoint 0 LSB 20h 79h Voltage Breakpoint 8 LSB 90h
6Ah Voltage Breakpoint 1 MSB B9h 7Ah Initial Capacity Scaling Factor 80h
6Bh Voltage Breakpoint 1 LSB 50h 7Bh Blanking/OCV Current Threshold 06h
6Ch Voltage Breakpoint 2 MSB BCh 7Ch OCV dV/dt Threshold 93h
6Dh Voltage Breakpoint 2 LSB 10h 7Dh I
2
C Address Configuration* 60h*
6Eh Voltage Breakpoint 3 MSB C0h 7Eh Learn Threshold 78h
6Fh Voltage Breakpoint 3 LSB 20h 7Fh User EEPROM 00h
*The factory default 7-bit Slave Address is 0110110. The upper 3 bits are fixed at 011, the lower 4 bits can be changed by writing the I
2
C
Address Configuration Register as illustrated in Figures 24 and 25
.