Datasheet
DS2782
11 of 28
Figure 9. Fractional/Low Accumulated Current Register Format, ACRL
ACRL
Read Only
MSB—Address 12h LSB—Address 13h
2
11
2
10
2
9
2
8
2
7
2
6
2
5
2
4
2
3
2
2
2
1
2
0
X X X X
MSb LSb MSb LSb
“X”: reserved Units:1.526nVHr/R
SNS
ACR LSb
R
SNS
VSS
-
VSNS
20m 15m 10m 5m
6.25Vh 312.5Ah 416.7Ah 625Ah
1.250mAh
ACR RANGE
R
SNS
VSS
-
VSNS
20m 15m 10m 5m
409.6mVh 20.48Ah 27.30Ah 40.96Ah 81.92Ah
ACCUMULATION BIAS
The Accumulation Bias register (AB) allows an arbitrary bias to be introduced into the current-accumulation
process. The AB can be used to account for currents that do not flow through the sense resistor, estimate currents
too small to measure, estimate battery self-discharge or correct for static offset of the individual DS2782 device.
The AB register allows a user programmed constant positive or negative polarity bias to be included in the current
accumulation process. The user-programmed two’s complement value, with bit weighting the same as the current
register, is added to the ACR once per current conversion cycle. The AB value is loaded on power-up from
EEPROM memory. The format of the AB register is shown in Figure 10.
Figure 10. Accumulation Bias Register Formats
AB
EE
Address 61h
S 2
6
2
5
2
4
2
3
2
2
2
1
2
0
MSb LSb
“S”: sign bit Units: 1.5625V/Rsns