Datasheet

(T
A
= -40°C to +85°C.) (Note 1)
Note 1: Limits are 100% production tested at T
A
= +25°C and/or T
A
= +85°C. Limits over the operating temperature range and rel-
evant supply voltage range are guaranteed by design and characterization. Typical values are not guaranteed.
Note 2: System requirement.
Note 3: Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system and 1-Wire recovery
times. The specified value here applies to systems with only one device and with the minimum 1-Wire recovery times.
For more heavily loaded systems, an active pullup such as that found in the DS2482-x00, DS2480B, or DS2490 may be
required.
Note 4: Maximum value represents the internal parasite capacitance when V
PUP
is first applied. Once the parasite capacitance is
charged, it does not affect normal communication.
Note 5: Guaranteed by design, characterization, and/or simulation only. Not production tested.
Note 6: V
TL
, V
TH
, and V
HY
are a function of the internal supply voltage, which is a function of V
PUP
, R
PUP
, 1-Wire timing, and
capacitive loading on IO. Lower V
PUP
, higher R
PUP
, shorter t
REC
, and heavier capacitive loading all lead to lower values
of V
TL
, V
TH
, and V
HY
.
Note 7: Voltage below which, during a falling edge on IO, a logic 0 is detected.
Note 8: The voltage on IO must be less than or equal to V
ILMAX
at all times the master is driving IO to a logic 0 level.
Note 9: Voltage above which, during a rising edge on IO, a logic 1 is detected.
Note 10: After V
TH
is crossed during a rising edge on IO, the voltage on IO must drop by at least V
HY
to be detected as logic 0.
Note 11: The I-V characteristic is linear for voltages less than 1V.
Note 12: Applies to a single device attached to a 1-Wire line.
Note 13: The earliest recognition of a negative edge is possible at t
REH
after V
TH
has been reached on the preceding rising edge.
Note 14: Defines maximum possible bit rate. Equal to t
W0LMIN
+ t
RECMIN
.
Note 15: Interval after t
RSTL
during which a bus master can read a logic 0 on IO if there is a DS2431 present. The power-up pres-
encedetect pulse could be outside this interval, but will be complete within 2ms after power-up.
Note 16: Numbers in bold are not in compliance with legacy 1-Wire product standards. See the Comparison Table.
Note 17: ε in Figure 11 represents the time required for the pullup circuitry to pull the voltage on IO up from V
IL
to V
TH
. The actual
maximum duration for the master to pull the line low is t
W1LMAX
+ t
F - ε
and t
W0LMAX
+ t
F - ε
, respectively.
Note 18: δ in Figure 11 represents the time required for the pullup circuitry to pull the voltage on IO up from V
IL
to the input-high
threshold of the bus master. The actual maximum duration for the master to pull the line low is t
RLMAX
+ t
F
.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
IO PIN: 1-Wire WRITE
Write-Zero Low Time
(Notes 2, 16, 17)
t
W0L
Standard speed 60 120
µsOverdrive speed, V
PUP
> 4.5V 5 15.5
Overdrive speed 6 15.5
Write-One Low Time
(Notes 2, 17)
t
W1L
Standard speed 1 15
µs
Overdrive speed 1 2
IO PIN: 1-Wire READ
Read Low Time
(Notes 2, 18)
t
RL
Standard speed 5 15 - d
µs
Overdrive speed 1 2 - d
Read Sample Time
(Notes 2, 18)
t
MSR
Standard speed t
RL
+ d 15
µs
Overdrive speed t
RL
+ d 2
EEPROM
Programming Current I
PROG
(Notes 5, 19) 0.8 mA
Programming Time t
PROG
(Notes 20, 21) 10 ms
Write/Erase Cycles (Endurance)
(Notes 22, 23)
N
CY
At +25°C 200k
—
At +85°C (worst case) 50k
Data Retention
(Notes 24, 25, 26)
t
DR
At +85°C (worst case) 40 Years
DS2431 1024-Bit, 1-Wire EEPROM
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Electrical Characteristics (continued)