Datasheet

DS2431-A1
1024-Bit, 1-Wire EEPROM
for Automotive Applications
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(T
A
= -40°C to +125°C) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
I/O Voltage to GND .....................................................-0.5V, +6V
I/O Sink Current ..................................................................20mA
Operating Temperature Range .........................-40°C to +125°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-55°C to +125°C
Soldering Temperature .....................See IPC/JEDEC J-STD-020
specification.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I/O PIN GENERAL DATA
1-Wire Pullup Voltage V
PUP
(Note 2) 4.5 5.25 V
1-Wire Pullup Resistance R
PUP
(Notes 2, 3) 0.3 2.2 k
Input Capacitance C
IO
(Notes 4, 5) 1000 pF
Input Load Current I
L
I/O pin at V
PUP
0.05 10 μA
High-to-Low Switching Threshold V
TL
(Notes 5, 6, 7) 0.5
V
PUP
-
1.8
V
Input Low Voltage V
IL
(Notes 2, 8) 0.5 V
Low-to-High Switching Threshold V
TH
(Notes 5, 6, 9) 1.0
V
PUP
-
1.0
V
Switching Hysteresis V
HY
(Notes 5, 6, 10) 0.21 1.70 V
Output Low Voltage V
OL
At 4mA (Note 11) 0.4 V
Recovery Time t
REC
R
PUP
= 2.2k (Notes 2, 12) 5 μs
Rising-Edge Hold-Off Time t
REH
(Notes 5, 13) 0.5 5.0 μs
Time Slot Duration t
SLOT
(Notes 2, 14) 65 μs
I/O PIN, 1-Wire RESET, PRESENCE-DETECT CYCLE
Reset Low Time t
RSTL
(Note 2) 480 640 μs
Presence-Detect High Time t
PDH
15 60 μs
Presence-Detect Low Time t
PDL
60 240 μs
Presence-Detect Sample Time t
MSP
(Notes 2, 15) 60 75 μs
I/O PIN, 1-Wire WRITE
Write-0 Low Time t
W0L
(Notes 2, 16) 60 120 μs
Write-1 Low Time t
W1L
(Notes 2, 16) 1 15 μs
I/O PIN, 1-Wire READ
Read Low Time t
RL
(Notes 2, 17) 5 15 -  μs
Read Sample Time t
MSR
(Notes 2, 17) t
RL
+  15 μs
EEPROM
Programming Current I
PROG
(Notes 5, 18) 0.8 mA
Programming Time t
PROG
(Note 19) 10 ms
At +25°C 200k
At +85°C 50k
Write/Erase Cycles (Endurance)
(Notes 20, 21)
N
CY
At +125°C 1k

Data Retention
(Notes 22, 23, 24)
t
DR
At +125°C (worst case) 10 Years