Datasheet

DS18S20
21 of 23
AC ELECTRICAL CHARACTERISTICS—NV MEMORY
(V
DD
= 3.0V to 5.5V, T
A
= -55°C to +100°C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
NV Write Cycle Time
t
WR
2
10
ms
EEPROM Writes
N
EEWR
-55°C to +55°C
50k
writes
EEPROM Data Retention
t
EEDR
-55°C to +55°C
10
years
AC ELECTRICAL CHARACTERISTICS
(V
DD
= 3.0V to 5.5V; T
A
= -55°C to +125°C, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
NOTES
Temperature Conversion
Time
t
CONV
750 ms 1
Time to Strong Pullup On t
SPON
Start Convert T
Command Issued
10
µs
Time Slot t
SLOT
60 120
µ
s
1
Recovery Time t
REC
1
µs
1
Write 0 Low Time
t
LOW0
60
120
µ
s
1
Write 1 Low Time t
LOW1
1 15
µ
s
1
Read Data Valid t
RDV
15
µs
1
Reset Time High
t
RSTH
480
µs
1
Reset Time Low
t
RSTL
480
µ
s
1, 2
Presence-Detect High t
PDHIGH
15 60
µs
1
Presence-Detect Low
t
PDLOW
60
240
µs
1
Capacitance
C
IN/OUT
25
pF
NOTES:
1) See the timing diagrams in Figure 17.
2) Under parasite power, if t
RSTL
> 960µs, a power-on reset may occur.
Figure 16. Typical Performance Curve
DS18S20 Typical Error Curve
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0 10 20 30 40 50 60 70
Temperature (°C)
Mean Error
+3s Error
-3s Error