Datasheet
DS18S20-PAR
18 of 20
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to ground –0.5V to +6.0V
Operating temperature –55°C to +100°C
Storage temperature –55°C to +125°C
Soldering temperature See J-STD-020A Specification
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS (-55°C to +100°C; V
PU
=3.0V to 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Pullup Supply Voltage V
PU
3.0 5.5 V 1,2
Thermometer Error t
ERR
-10°C to +85°C ±½ °C 3
-55°C to +100°C ±2
Input Logic Low V
IL
-0.3 +0.8 V 1,4,5
Input Logic High V
IH
3.0 5.5 V 1,6
Sink Current I
L
V
I/O
=0.4V 4.0 mA 1
Active Current I
DQA
1 1.5 mA 7
DQ Input Current I
DQ
5µA8
Drift ±0.2 °C 9
NOTES:
1. All voltages are referenced to ground.
2. The Pullup Supply Voltage specification assumes that the pullup device (resistor or transistor) is
ideal, and therefore the high level of the pullup is equal to V
PU
. In order to meet the V
IH
spec of the
DS18S20-PAR, the actual supply rail for the strong pullup transistor must include margin for the
voltage drop across the transistor when it is turned on; thus: V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
3. See typical performance curve in Figure 15.
4. Logic low voltages are specified at a sink current of 4 mA.
5. To always guarantee a presence pulse under low voltage parasite power conditions, V
ILMAX
may have
to be reduced to as low as 0.5V.
6. Logic high voltages are specified at a source current of 1 mA.
7. Active current refers to supply current during active temperature conversions or EEPROM writes.
8. DQ line is high (“hi-Z” state).
9. Drift data is based on a 1000 hour stress test at 125°C.
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
(-55°C to +100°C; V
PU
=3.0V to 5.5V)
PARAMETER
SYMB
OL
CONDITION MIN TYP MAX UNITS
NV Write Cycle Time t
wr
210ms
EEPROM Writes N
EEWR
-55°C to +55°C 50k writes
EEPROM Data Retention t
EEDR
-55°C to +55°C 10 years