Datasheet

DS1848
5 of 17
Memory Location Name of Location Function of Location
With AEN = 0 the user can operate in a test
mode. Address updates made from the
temperature sensor will cease. The user can load a
memory location into E4h and verify that the
values in locations F0h and F1h are the expected
user-defined values.
E2h Temperature MSB This byte contains the MSB of the 13-bit 2s
complement temperature output from the
temperature sensor.
E3h Temperature LSB This byte contains the LSB of the 13-bit 2s
complement temperature output from the
temperature sensor.
For example temperature readings, refer to Table
2.
E4h Address Pointer Calculated, current resistor address (0h – 47h).
The user-defined resistor setting at this location in
the respective look-up table will be loaded into
F0h and F1h to set the two resistors.
E5h to E6h User Memory General purpose user memory (SRAM)
E7h Address Select Internal or external device address select. This
byte allows the user to use the external address
pins or an internal register location to determine
the device address.
ENB = 0 and external A2, A1, A0 grounded,
device will use internal address bits (A2, A1, A0)
in this register
ENB = 1, external A2, A1, A0 = any setting,
device will use external address pins
Default setting is 01h. The device uses external
pins to determine its address.
E8h to EFh User Memory General purpose user memory (SRAM)
F0h Resistor 0 Setting In the user-controlled setting mode, this block
contains the resistor 0 setting.
F1h Resistor 1 Setting In the user-controlled setting mode, this block
contains the resistor 1 setting.
F2h to FFh User memory General purpose user memory (SRAM)
S 2
7
2
6
2
5
2
4
2
3
2
2
2
1
2
0
2
-1
2
-2
2
-3
2
-4
X X X
A2 A1 A0 ENB