Datasheet

DS1822
20 of 21
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
(-55°C to +100°C; V
DD
= 3.0V to 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS
NV Write Cycle Time t
wr
2 10 ms
EEPROM Writes N
EEWR
-55°C to +55°C 50k writes
EEPROM Data Retention t
EEDR
-55°C to +55°C 10 years
AC ELECTRICAL CHARACTERISTICS (-55°C to +125°C; V
DD
= 3.0V to 5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Temperature Conversion t
CONV
9-bit resolution 93.75 ms 1
Time 10-bit resolution 187.5 ms 1
11-bit resolution 375 ms 1
12-bit resolution 750 ms 1
Time to Strong Pullup On t
SPON
Start Convert T
Command Issued
10 µs
Time Slot t
SLOT
60 120 µs 1
Recovery Time t
REC
1 µs 1
Write 0 Low Time r
LOW0
60 120 µs 1
Write 1 Low Time t
LOW1
1 15 µs 1
Read Data Valid t
RDV
15 µs 1
Reset Time High t
RSTH
480 µs 1
Reset Time Low t
RSTL
480 µs 1,2
Presence Detect High t
PDHIGH
15 60 µs 1
Presence Detect Low t
PDLOW
60 240 µs 1
Capacitance C
IN/OUT
25 pF
NOTES:
1. Refer to timing diagrams in Figure 18.
2. Under parasite power, if t
RSTL
> 960μs, a power on reset may occur.
TYPICAL PERFORMANCE CURVE Figure 17
DS1822 Typical Performance Curve
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
-10 0 10 20 30 40 50 60 70 80
Temperature (°C)
Thermometer Error (°C)
+3s Error
-3s Error
Mean Error