Datasheet
DS1822-PAR 
  17 of 19 
ABSOLUTE MAXIMUM RATINGS* 
Voltage on Any Pin Relative to Ground  -0.5V to +6.0V 
Operating Temperature Range  -55°C to +100°C 
Storage Temperature Range  -55°C to +125°C 
Solder Dip Temperature  See IPC/JEDEC J-STD-020A Specification 
Reflow Oven Temperature  +220°C 
*These are stress ratings only and functional operation of the device at these or any other conditions 
above those indicated in the operation sections of this specification is not implied. Exposure to absolute 
maximum rating conditions for extended periods of time may affect reliability. 
DC ELECTRICAL CHARACTERISTICS (-55°C to +100°C; V
PU 
= 3.0V to 5.5V) 
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Pullup Supply 
Voltage 
V
PU
 3.0  5.5 V 1, 2 
Thermometer Error  t
ERR
  -10°C to +85°C      ±2 
    -55°C to +100°C      ±3 
°C 
3 
Input Logic Low  V
IL
    -0.3    +0.8  V  1, 4, 5 
Input Logic High  V
IH
 3.0  5.5 V 1, 6 
Sink Current  I
L
 V
I/O 
= 0.4V  4.0      mA  1 
Active Current  I
DQA
  1 1.5 mA 7 
DQ Input Current  I
DQ
  5  µA 8 
Drift 
 ±0.2  °C  9 
NOTES: 
1.  All voltages are referenced to ground. 
2.  The Pullup Supply Voltage specification assumes that the pullup device (resistor or transistor) is 
ideal, and therefore the high level of the pullup is equal to V
PU
. In order to meet the V
IH
 spec of the 
DS1822-PAR, the actual supply rail for the strong pullup transistor must include margin for the 
voltage drop across the transistor when it is turned on; thus: V
PU_ACTUAL 
= V
PU_IDEAL 
+ V
TRANSISTOR
. 
3.  See typical performance curve in Figure 15. 
4.  Logic low voltages are specified at a sink current of 4mA. 
5.  To always guarantee a presence pulse under low voltage parasite power conditions, V
ILMAX
 may have 
to be reduced to as low as 0.5V. 
6.  Logic high voltages are specified at a source current of 1mA. 
7.  Active current refers to supply current during active temperature conversions or EEPROM writes. 
8.  DQ line is high (“high-Z” state). 
9.  Drift data is based on a 1000 hour stress test at +125°C. 
AC ELECTRICAL CHARACTERISTICS: NV MEMORY 
(-55°C to +100°C; V
PU 
= 3.0V to 5.5V) 
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS 
NV Write Cycle Time  t
wr
  2 10 ms 
EEPROM Writes  N
EEWR
  -55°C to +55°C  50k      writes 
EEPROM Data Retention  t
EEDR
  -55°C to +55°C  10      years 










