Datasheet

DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs
10 of 17
DC ELECTRICAL CHARACTERISTICS (3.3V)
(V
CC
= 3.3V ±10%, T
A
= Over the Operating Range.)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Active Supply Current I
CC
10 30 mA 2, 3
TTL Standby Current (CE = V
IH
)
I
CC1
0.7 2 mA 2, 3
CMOS Standby Current
(CE ≥ V
CC
- 0.2V;
CE2 = GND + 0.2V)
I
CC2
0.7 2 mA 2, 3
Input Leakage Current
(Any Input)
I
IL
-1 +1
µA
Output Leakage Current
(Any Output)
I
OL
-1 +1
µA
Output Logic 1 Voltage
(I
OUT
= -1.0mA)
V
OH
2.4 1
Output Logic 0 Voltage
(I
OUT
=2.1mA)
V
OL1
0.4 1
Write-Protection Voltage V
PF
2.75 2.97 V 1
Battery Switchover Voltage V
SO
V
BAT
or
V
PF
V 1, 4
AC CHARACTERISTICS—READ CYCLE (5V)
(V
CC
= 5.0V ±10%, T
A
= Over the Operating Range.)
PARAMETER SYMBOL
ACCESS
UNITS NOTES
70ns 85ns 100ns
MIN MAX MIN MAX MIN MAX
Read Cycle Time t
RC
70 85 100 ns
Address Access Time t
AA
70 85 100 ns
CE to CE2 to DQ Low-Z
t
CEL
5 5 5 ns 5
CE Access Time
t
CEA
70 85 100 ns 5
CE2 Access Time t
CE2A
80 95 105 ns 5
CE
and CE2 Data-Off
Time
t
CEZ
25 30 35 ns
OE to DQ Low-Z
t
OEL
5 5 5 ns
OE Access Time
t
OEA
35 45 55 ns
OE Data-Off Time
t
OEZ
25 30 35 ns
Output Hold from
Address
t
OH
5 5 5 ns