Datasheet

DS1558
12 of 18
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +3.3V ±10% or +5V ±10%, T = -40°C to +85°C.)
NOTES
A
PARAMETER SYMBOL MIN TYP MAX UNITS
Active Suppl mA 2, 3 y Current, +5V I
CC
6 25
Active Suppl mA 2, 3 y Current, +3.3V I
CC
4 15
TTL Standby, +5V ( CE = V
IH
)
I
CC1
3 6 mA 2, 3
TTL Standby, +3.3V ( CE = V
IH
)
I
CC1
2 6 mA 2, 3
CMOS Standb
(
y Current, +5V
CE
V
CC
mA 2, 3
- 0.2V)
I
CC2
2 6
CMOS Standby Current, +3.3V
(
CE V - 0.2V)
CC
I
CC2
1 2 mA 2, 3
Input Leakage Current
(Any Input)
I
IL
-1 +1
A
Output Leakage Current
(Any Output)
I
OL
-1 +1
A
Output Logic 1 Voltage
(I
OUT
= -1.0mA)
V
OH
2.4 V 1
I
OUT
= 2.1mA,
DQ0–DQ7 Outputs
V
OL1
0.4 V 1
Output Logic 0
Voltage
I
OUT
= 7.0mA,
IRQ /FT and
RST
Outputs
V
OL2
0.4 V 1, 5
Write Protection Voltage, +5V V
PF
4.20 4.37 4.50 V 1
Write Protection Voltage, +3.3V V 2.75 2.88 2.97
PF
V 1
Battery Switchover Voltage, +5V V
SO
V
BAT
V 1
Battery Switchover Voltage, +3.3V V
SO
V
PF
V 1, 4
Battery Curre 0.3 0.5 μA 6,7 nt OSC On I
OSC
Battery Current OSC Off I
BACKUP
100 nA 7
Output Voltage I
CCO
= 70mA, +5V V
CC01
V
CC1
-
0.3
V
Output Voltage I
CCO
= 40mA, +3.3V V
CC01
V
CC1
-
0.3
V
Output Voltage I
CCO
= 10μA V
CC02
V
BAT
-
0.2
V
BAT
-
0.031
V 10
CRYSTAL SPECIFICATIONS
*
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Nominal Frequency f
O
32.768 kHz
Series Resistance ESR 45 kΩ
Load Capacitance C
L
6 pF
*The crystal, traces, and crystal input pins should be isolated from RF generating signals. Refer to Application Note 58: Crystal Considerations
for Dallas Real-Time Clocks for additional specifications.