Datasheet

71M6511/71M6511H
Single-Phase Energy Meter IC
DATA SHEET
NOVEMBER 2010
Page: 91 of 98 © 2005–2010 Teridian Semiconductor Corporation V2.7
A Maxim Integrated Products Brand
RAM AND FLASH MEMORY
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
CE RAM wait states
CKMPU = 4.9MHz
5
Cycles
CKMPU = 1.25MHz
2
Cycles
Flash write cycles
-40°C to +85°C
20,000
Cycles
Flash data retention
85°C
10
Years
Flash data retention
25°C
100
Years
Flash byte writes between page or mass
erase operations
2 Cycles
FLASH MEMORY TIMING
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
Write Time per Byte
42
µs
Page Erase (512 bytes)
20
ms
Mass Erase
200
ms
Flash byte writes between page or mass
erase operations
2 Cycles
EEPROM INTERFACE
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
Write Clock frequency
CKMPU=4.9MHz, Using
interrupts
78 kHz
CKMPU=4.9MHz, “bit-
banging” DIO4/5
150 kHz
Recommended External Components
NAME
FROM
TO
FUNCTION
VALUE
UNIT
C1
V3P3A
AGND
Bypass capacitor for 3.3V supply
≥0.1±20%
µF
C2
V3P3D
DGND
Bypass capacitor for 3.3V supply
≥0.1±20%
µF
XTAL XIN XOUT
32.768kHz crystal. Electrically similar to ECS
ECX-3TA series
32.768 kHz
CXS
XIN
AGND
Load capacitor for crystal (depends on crystal
specs and board parasitics).
22±10%
pF
CXL
XOUT
AGND
22±10%
pF
CBIAS
VBIAS
AGND
Bypass capacitor for VBIAS
≥
1000
±
20%
pF
CBST1
VDRV
External
Boost charging capacitor
33
±
20%
nF
C2P5
V2P5
DGND
Bypass capacitor for V2P5
≥0.1±20%
µF
CBST2
VLCD
DGND
Boost bypass capacitor
≥0.22±20%
µF