Datasheet

GaAs SPDT 2.5 V High Power Switch
DC - 3.0 GHz
MASWSS0006
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V4
2
Electrical Specifications: T
A
= 25°C, V
C
= 0 V / 2.5 V, Z
0
= 50 Ω
6
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss
7
DC – 1.0 GHz
1.0 – 2.0 GHz
2.0 - 3.0 GHz
dB
dB
dB
—
—
—
0.40
0.50
0.75
0.65
0.75
Isolation
DC – 1.0 GHz
1.0 – 2.0 GHz
2.0 - 3.0 GHz
dB
dB
dB
23.0
17.5
—
26
20
16
—
—
—
Return Loss
DC – 2.0 GHz
2.0 - 3.0 GHz
dB
dB
—
—
20
16
—
—
IP3
Two Tone, +26 dBm / tone, 5 MHz Spacing
> 50 MHz
dBm — 57 —
P0.1dB — dBm — 39 —
2
nd
Harmonic 1.0 GHz, P
IN
= +34 dBm dBc — -75 -67
3
rd
Harmonic 1.0 GHz, P
IN
= +34 dBm dBc — -75 -67
Trise, Tfall 10% to 90% RF, 90% to 10% RF uS — 0.04 —
Ton, Toff 50% control to 90% RF, and 50% control to 10% RF uS — 0.06 —
Transients In Band mV — 50 —
Gate Leakage uA — — 50
6. External DC blocking capacitors are required on all RF ports.
7. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 - 500 MHz, 100 pF for 0.5 - 3.0 GHz.
Qualification
Qualified to M/A-COM specification REL-201,
Process Flow –2.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
SOT-26 Plastic Package
†
†
Meets JEDEC moisture sensitivity level 1 requirements