Owner's manual

Power Module
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:08/06/13
2
MG12300D-BN2MM
1200V IGBT Family
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
V
GE(th)
Gate - Emitter Threshold Voltage V
CE
=V
GE
, I
C
=12mA 5.0 5.8 6.5 V
V
CE(sat)
Collector - Emitter
Saturation Voltage
I
C
=300A, V
GE
=15V, T
Vj
=25°C 1. 7 V
I
C
=300A, V
GE
=15V, T
Vj
=125°C 1.9 V
I
CES
Collector Leakage Current
V
CE
=1200V, V
GE
=0V, T
Vj
=25°C 1 mA
V
CE
=1200V, V
GE
=0V, T
Vj
=125°C 5 mA
I
GES
Gate Leakage Current V
CE
=0V,V
GE
=±15V, T
Vj
=125°C -400 400 μA
R
Gint
Intergrated Gate Resistor 2.5 Ω
Q
ge
Gate Charge V
CE
=600V, I
C
=300A , V
GE
=±15V 2.8 μC
C
ies
Input Capacitance
V
CE
=25V, V
GE
=0V, f =1MHz
21 nF
C
res
Reverse Transfer Capacitance 0.85 nF
t
d(on)
Turn - on Delay Time
V
CC
=600V
I
C
=300A
R
G
=2.4Ω
V
GE
=±15V
Inductive Load
T
Vj
=25°C 160 ns
T
Vj
=125°C 170 ns
t
r
Rise Time
T
Vj
=25°C 40 ns
T
Vj
=125°C 45 ns
t
d(off)
Turn - off Delay Time
T
Vj
=25°C 450 ns
T
Vj
=125°C 520 ns
t
f
Fall Time
T
Vj
=25°C 10 0 ns
T
Vj
=125°C 160 ns
E
on
Turn - on Energy
T
Vj
=25°C 16.5 mJ
T
Vj
=125°C 25 mJ
E
off
Turn - off Energy
T
Vj
=25°C 24.5 mJ
T
Vj
=125°C 37 mJ
I
SC
Short Circuit Current
t
psc
≤10μS , V
GE
=15V
1200 A
T
Vj
=125°C,V
CC
=900V
R
thJC
Junction-to-Case Thermal
Resistance (Per IGBT)
0.085 K/W
Diode
V
F
Forward Voltage
I
F
=300A , V
GE
=0V, T
Vj
=25°C 1.65 V
I
F
=300A , V
GE
=0V, T
Vj
=125°C 1.65 V
I
RRM
Max. Reverse Recovery Current I
F
=300A , V
R
=600V 270 A
Q
rr
Reverse Recovery Charge d
iF
/dt=-6000A/μs 56 μC
E
rec
Reverse Recovery Energy T
Vj
=125°C 26 mJ
R
thJCD
Junction-to-Case Thermal
Resistance (Per Diode)
0.15 K/W
Electrical and Thermal Specifications (T
C
= 25°C, unless otherwise specified)