Instruction Manual

©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:08/06/13
Power Module
4
MG06400D-BN4MM
600V IGBT Family
Figure 7: Diode Forward Characteristics
V
F
˄V˅
0.4
0 0.8
1.2
1.6
2.0
0
160
480
640
800
320
I
F
(A)
T
Vj
=25°C
T
Vj
=125°C
E
rec
(mJ)
R
G
˄Ω˅
0
246 8
6
4
2
0
8
10
12
10
12
I
F
=400 A
V
CE
=300V
T
Vj
=125°C
Figure 8: Switching Energy vs. Gate Resistort
E
rec
(mJ)
6
4
2
0
800
600 200
0
12
400
10
8
R
G
=1.5Ω
V
CE
=300V
T
Vj
=125°C
Figure 9: Switching Energy vs. Forward Current
Rectangular Pulse Duration (seconds)
Z
thJC
(K/W)
0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
Diode
IGBT
Figure 10: Transient Thermal Impedance