Instruction Manual

©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:08/06/13
Power Module
2
MG06400D-BN4MM
600V IGBT Family
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
V
GE(th)
Gate - Emitter Threshold Voltage V
CE
=V
GE
, I
C
=6.4mA 4.9 5.8 6.5 V
V
CE(sat)
Collector - Emitter
Saturation Voltage
I
C
=400A, V
GE
=15V, T
Vj
=25°C 1.45 V
I
C
=400A, V
GE
=15V, T
Vj
=125°C 1. 6 V
I
CES
Collector Leakage Current
V
CE
=600V, V
GE
=0V, T
Vj
=25°C 1. 0 mA
V
CE
=600V, V
GE
=0V, T
Vj
=125°C 5 mA
I
GES
Gate Leakage Current V
CE
=0V,V
GE
=±15V, T
Vj
=125°C -400 400 μA
R
Gint
Intergrated Gate Resistor 1. 0 Ω
Q
ge
Gate Charge V
CE
=300V, I
C
=400A , V
GE
=±15V 4.3 μC
C
ies
Input Capacitance
V
CE
=25V, V
GE
=0V, f =1MHz
26 nF
C
res
Reverse Transfer Capacitance 0.76 nF
t
d(on)
Turn - on Delay Time
V
CC
=300V
I
C
=400A
R
G
=1.5Ω
V
GE
=±15V
Inductive Load
T
Vj
=25°C 110 ns
T
Vj
=125°C 120 ns
t
r
Rise Time
T
Vj
=25°C 50 ns
T
Vj
=125°C 60 ns
t
d(off)
Turn - off Delay Time
T
Vj
=25°C 490 ns
T
Vj
=125°C 520 ns
t
f
Fall Time
T
Vj
=25°C 60 ns
T
Vj
=125°C 70 ns
E
on
Turn - on Energy
T
Vj
=25°C 2.1 mJ
T
Vj
=125°C 3.2 mJ
E
off
Turn - off Energy
T
Vj
=25°C 12 mJ
T
Vj
=125°C 15 mJ
I
SC
Short Circuit Current
t
psc
≤6μS , V
GE
=15V
2000 A
T
Vj
=125°C,V
CC
=360V
R
thJC
Junction-to-Case Thermal
Resistance (Per IGBT)
0.12 K/W
Diode
V
F
Forward Voltage
I
F
=400A , V
GE
=0V, T
Vj
=25°C 1.55 V
I
F
=400A , V
GE
=0V, T
Vj
=125°C 1.50 V
I
RRM
Max. Reverse Recovery Current I
F
=400A , V
R
=300V 330 A
Q
rr
Reverse Recovery Charge d
iF
/dt=-7000A/μs 29.0 μC
E
rec
Reverse Recovery Energy T
Vj
=125°C 7. 4 mJ
R
thJCD
Junction-to-Case Thermal
Resistance (Per Diode)
0.22 K/W
Electrical and Thermal Specifications (T
C
= 25°C, unless otherwise specified)