Datasheet

13
HSDL-54xx Absolute Maximum Ratings
Parameter Symbol Min. Max. Unit
Power Dissipation P
DISS
150 mW
Reverse Voltage (I
R
= 100 µA) V
R
40 V
Operating Temperature T
O
-40 85 °C
Storage Temperature T
S
-55 100 °C
Junction Temperature T
J
110 °C
Lead Solder Temperature [1.6 mm (0.063 in.) from body] 260/5 s ° C
Reflow Soldering Temperatures
Convection IR 235/90 s °C
Vapor Phase 215/180 s °C
HSDL-54xx Electrical Characteristics at T
A
= 25°C
Parameter Symbol Min. Typ. Max. Unit Condition Ref.
Forward Voltage V
F
0.8 V I
FDC
= 1 mA
Breakdown Voltage V
BR
40 V I
R
= 100 µA,
E
e
= 0 mW/cm
2
Reverse Dark Current I
D
15 nAV
R
= 5 V, Fig. 12
E
e
= 0 mW/cm
2
Series Resistance R
S
2000 Ω V
R
= 5 V,
E
e
= 0 mW/cm
2
Diode Capacitance C
O
5pFV
R
= 0 V, Fig. 16
E
e
= 0 mW/cm
2
f = 1 MHz
Open Circuit Voltage V
OC
375 mV E
e
= 1 mW/cm
2
l
PK
= 875 nm
Temperature Coefficient of V
OC
∆V
OC
/∆T -2.2 mV/K E
e
= 1 mW/cm
2
l
PK
= 875 nm
Short Circuit Current I
SC
E
e
= 1 mW/cm
2
HSDL-5400 1.6 µA
l
PK
= 875 nm
HSDL-5420 4.3 µA
Temperature Coefficient of I
SC
∆I
SC
/∆T 0.16 %/K E
e
= 1 mW/cm
2
l
PK
= 875 nm
Thermal Resistance, Rq
jp
170 °C/W
Junction to Pin