PROD DUCT SPECIIFICA ATION 802.11a/b/g/n 2Tx2R 2 + BT V4.1L LE USB Combo C M Module WC CBN4516R MediaT M Tek MT T7632TU U Version 1.0 Chaange Historry Reviision Verssion 1.0 Date 2016/08/03 Authorr Ben J C Chen Change Liist Preliminary y * Thhis document contains conffidential proprrietary inform mation and is property p of LTTC. The conten nts of thhis document should s not be disclosed to uunauthorized persons p without the written consent of LT TC.
PROD DUCT SPECIIFICA ATION 802.111a/b/g/n 2Tx2R 2 + BT V4.1L LE USB Combo C M Module WC CBN4516R MediaT M Tek MT T7632TU U Version 1.0 Nettworking B.U. B Lite-on L Tecchnology Corporation C n 4F, Noo. 90, Chien n 1 Rd., Chung Ho, H New Taaipei City 235, 2 Taiwan n, R.O.C. (Signature) Cusstomer Appro oval: (Title) (Company) (Date) ign Back by FAX.
CONTEN NT RODUCT FE EATURES ........................................................................................................................ 4 T FEATURE .............................................................................................................................................. 4 I-FI FEATURE .......................................................................................................................................... 4 OMMON FEATU URE ....................................
PRO ODUCT FEATURES E BT FEATU URE: z Bluuetooth V4.1 LE system Bacckwards com mpatible withh BT version of 1.1, 1.2, 2.0, 2 2.1, 3.0++HS and 4.
PRO ODUCT SPECIFICAT P TIONS MAIN CHIP PSET MediaTeek MT7632T TU FUNCTIONA AL SPECIFIC CATIONS BT Fu unction Standard d Bluuetooth V4.1LE Bus Interrface US SB2.0 Data Ratte 1M Mbps, 2Mbpss and Up to 3Mbps 3 Modulatiion Scheme GF FSK, /4-DQ QPSK and 8-D DPSK Frequenccy Range 2.4402~2.480 GH Hz Transmitt Output Po ower +4 Output Po ower +10dB Bm; Class 1 D Device Receiver Sensitivity < 00.1% BER att -80dBm Wi-Fii Function Standard d IEE EE802.11a; IEEE802.11b I b; IEEE 802..
21: USA 19: EU 8: Japan 8022.11bg 2.400 ~ 2.4835 GHz 8022.11a 5.15 ~ 5.85 GHz 8022.11a: -86 dBm@ @6Mbps -70 dBm@ @54Mbps 8022.11b: -88 dBm@ @1Mbps -82 dBm@ @11Mbps 8022.11g: -86 dBm@ @6Mbps -71 dBm@ @54Mbps 8022.11n: 22.4G/5G 20MHz -86 dBm@ @MCS0 -70 dBm@ @MCS7 -68 dBm@ @MCS15 40MHz -83 dBm@ @MCS0 -67 dBm@ @MCS7 -65 dBm@ @MCS15 WP PS, WPA, WPA2, W WEP 64bit & 128bbit, IEEE 802.1X, IEE EE 802.
PIN N ASSIGME ENT Pin. 1 3 5 7 9 11 Pin Define P GND DD+ GND WOB GND Pin.
MECHANICA AL Page 8/35
SHIIELDING CASE SPE EC M Manufacturre: Hun Paii(⬷㷫) A Approval Sh heet: see Ap ppendix A(ppage32~pag ge39) Page 9/35
Materiaal Certifica ation Page 10/35
PC CB UL CERTIFICAT E TE M Manufacturrer: APCB Page 11/35
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Man nufacturer:: BROAD Page 13/35
Man nufacturer:: Tripod Page 14/35
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U.
EE EPROM INFORMAT N TION BT Vendoor ID 0x0E88D Produ uct ID 0x76A A1 WI-FI Reg Domain Worldd Wide 2.44G/5G Reead from regiistry; Control by driver Offseet 0x38 for 5G G: 0xFF Offseet 0x39 for 2..
PAR RT LIST Item m Component_Description n O 0201 2.7pF//50V + 0.25pFF NPO GR M03 335C1H2R7CA A01D CHIP MONO 1 SMD(MURA ATA) O 0201 1.5pF//50V + 0.25pFF NPO GR M03 335C1H1R5CA A01D CHIP MONO 2 SMD(MURA ATA) CHIP MONO O 0201 0.5pF 50V + 0.25pF NPO GR M03 335C1HR50CA A01D 3 SMD(MURA ATA) CHIP MONO O 0201 2.7pF//50V + 0.
36 CHIP MONO O 0201 0.1uF//10V + 10% X55R GRM03 3R R61A104KE15D D SMD(MURA ATA) O 0201 2.7pF//50V + 0.
78 CHIP MONO O 0603 2.2uF//10V + 10% X55R GRM18 8R R61A225KE34D D SMD(MURA ATA) C68 79 CHIP MONO O 0201 0.1uF 10V + 10% X55R CC020 1KRX5R6BB104 SMD(YAGEO) C69 80 CHIP MONO O 0201 0.1uF 10V + 10% X55R C0603 X5R104KDTS SMD D(DARFON) C69 81 CHIP MONO O 0201 0.1uF//10V + 10% X55R GRM03 3R R61A104KE15D D SMD(MURA ATA) C69 82 CHIP MONO O 0201 10pF/5 50V + 5% NPO O GRM0335 C C1H100JA01D SMD(MURATTA) C7 83 CHIP MONO O 0201 0.
20 CHIP MONO O 0201 22pF/2 25V + 5% NPO O GRM0335 C C1E220JA01D SMD(MURATA A) C89 21 CHIP MONO O 0201 10pF/5 50V + 5% NPO O GRM0335 C C1H100JA01D SMD(MURATTA) C9 22 CHIP MONO O 0201 22pF/2 25V + 5% NPO O 0201N22 0J250CT SMD(W WALSIN) C90 23 CHIP MONO O 0201 22pF/2 25V + 5% NPO O C0603NP 02 220JFTS SMD(DARFON) C90 24 CHIP MONO O 0201 22pF/2 25V + 5% NPO O GRM0335 C C1E220JA01D SMD(MURATA A) C90 25 CHIP MONO O 0201 22pF/2 25V + 5% NPO O 0201N22 0J250CT SMD(W WALSIN) C91 26 CHIP MONO O
63 CHIP RES 1//16W + 1% 20 0ohm 0402 W WR04X20R0 FTTL SMD(WALSIIN) R20 64 CHIP RES 1//20W + 5% 1K K 0201 RM02JJTN102 S MD(TA I) R7 65 CHIP RES 1//20W + 5% 1K K 0201 WR02XX102 JAL SMD D(WALSIN) R7 66 CHIP RES 1//20W + 5% 1K K 0201 RR03066S 102 JNH SSMD(CYNTEC) R7 67 CHIP RES 1//20W + 5% 0o ohm 0201 RM M02JTN0 S MD D(TA I) R91 68 CHIP RES 1//20W + 5% 0o ohm 0201 WR R02X000 P AL SMD(WALSIN) R91 69 CHIP RES 1//20W + 5% 0o ohm 0201 RR00306S 00 0 XN NH SMD(CYNT TEC) R91 70 CHIP RES 1/
RELIABILITY Y TEST ITE EM T Test Report:: see Appen ndix C(pagee45~page78 8) Test Item Test Time Test Condition Test Estim mated Date Q'ty of Completion 1. E Environmenttal Test 1.1 T Thermal meassurement test 1.2 H High Temperaature Test (Opeerating) 1.3 L Low Temperaature Test (Opeerating) 1.4 T Temp. and Huumidity Cyclicc Test (Operational)) 1.5 H High Temperaature Test (Storrage) 1.6 L Low Temperaature Test (Storrage) 1.
Vibration Testt (Unit and kage) Unnit and Package (Random) 1. Frequency: 5 ~ 250Hz 2. Acceleration = 1.0Grms 3. Each of X, Y, Y Z axis/ 60 min m 4. Sample: 10U Units and 1 Carrton Unnit and Package (Sine) 1. Frequency: 5 ~ 250Hz 5.5hrs 2. Acceleration = 1.0Grms 3. Each of X, Y, Y Z axis/ 30 min m 4. Sample: Unitts and 1 Carton Unnit (Random) 1. Frequency: 10 ~ 1000Hz 2. Acceleration = 6~8Grms 3. Each of X, Y, Y Z axis/ 20 min m 4. Sample: Unitts 1.
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APPPENDIX A: SHIELDIING CASE SGS REPPORT Page 27/35
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APPPENDIX B: RELIABIILITY TESST REPORT T Page 35/35
FCC Statement: Federal Communication Commission Interference Statement This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation.
compliance to all the rules that apply to the product into which this certified RF module is integrated. Additional testing and certification may be necessary when multiple modules are used. 20 cm minimum distance has to be able to be maintained between the antenna and the users for the host this module is integrated into. Under such configuration, the FCC radiation exposure limits set forth for an population/uncontrolled environment can be satisfied.
OEM Integrator Checklist The party below will implement the LITE‐ON Module in host systems in accordance with the instructions specified in this document and the documents referenced herein. 1. The OEM integrator will ensure the Module is integrated in a host systems using only the approved antenna model(s) described in this document. BT：Walsin / RFPCA291503IMAB301 / PCB Antenna / Gain: 4.85 dBi WiFi_1：Walsin / RFPCA251523IMLB301 / PCB Antenna / 2.4G Gain: 3.94 dBi, 5G Gain: 5.
IC Statement: This device complies with Industry Canada license‐exempt RSS standard(s). Operation is subject to the following two conditions: (1) this device may not cause interference, and (2) this device must accept any interference, including interference that may cause undesired operation of the device. Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio exempts de licence.
Sélection dynamique de fréquences (DFS) pour les dispositifs fonctionnant dans les bandes 5250‐5350 MHz, 5470‐5600 MHz et 5650‐5725 MHz. The maximum antenna gain permitted for devices in the bands 5250‐5350 MHz and 5470‐5725 MHz shall be such that the equipment still complies with the e.i.r.p. limit. le gain maximal d’antenne permis pour les dispositifs utilisant les bandes 5250‐5350 MHz et 5470‐5725 MHz doit se conformer à la limite de p.i.r.e.
user has to be informed that the IC radio‐frequency exposure guidelines for an uncontrolled environment can be satisfied. The end user has to also be informed that any changes or modifications not expressly approved by the manufacturer could void the user's authority to operate this equipment.
