Datasheet

LTC4446
3
4446f
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4446E is guaranteed to meet specifi cations from
0°C to 85°C. Specifi cations over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
ELECTRICAL CHARACTERISTICS
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
CC
= V
BOOST
= 12V, V
TS
= GND = 0V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Low Side Gate Driver Output (BG)
V
OH(BG)
BG High Output Voltage I
BG
= –10mA, V
OH(BG)
= V
CC
– V
BG
0.7 V
V
OL(BG)
BG Low Output Voltage I
BG
= 100mA
l
55 110 mV
I
PU(BG)
BG Peak Pull-Up Current
l
23 A
R
DS(BG)
BG Pull-Down Resistance
l
0.55 1.1
Ω
Switching Time (BINP (TINP) is Tied to Ground While TINP (BINP) is Switching. Refer to Timing Diagram)
t
PLH(TG)
TG Low-High (Turn-On) Propagation Delay
l
25 45 ns
t
PHL(TG)
TG High-Low (Turn-Off) Propagation Delay
l
22 40 ns
t
PLH(BG)
BG Low-High (Turn-On) Propagation Delay
l
19 35 ns
t
PHL(BG)
BG High-Low (Turn-Off) Propagation Delay
l
14 30 ns
t
DM(BGTG)
Delay Matching BG Turn-Off and TG Turn-On
l
–15 10 35 ns
t
DM(TGBG)
Delay Matching TG Turn-Off and BG Turn-On
l
–25 –3 25 ns
t
r(TG)
TG Output Rise Time 10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
8
80
ns
ns
t
f(TG)
TG Output Fall Time 10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
5
50
ns
ns
t
r(BG)
BG Output Rise Time 10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
6
60
ns
ns
t
f(BG)
BG Output Fall Time 10% – 90%, C
L
= 1nF
10% – 90%, C
L
= 10nF
3
30
ns
ns
with statistical process controls. The LTC4446I is guaranteed over the full
–40°C to 85°C operating temperature range.
Note 3: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formula:
T
J
= T
A
+ (P
D
• θ
JA
°C/W)
Note 4: Failure to solder the exposed back side of the MS8E package to the
PC board will result in a thermal resistance much higher than 40°C/W.
TYPICAL PERFORMANCE CHARACTERISTICS
V
CC
Supply Quiescent Current
vs Voltage
BOOST-TS Supply Quiescent
Current vs Voltage
V
CC
Supply Current vs
Temperature
V
CC
SUPPLY VOLTAGE (V)
0
0
QUIESCENT CURRENT (μA)
50
150
200
250
6 7 8 9 10 11 12 13
450
4446 G01
100
12345 14
300
350
400
TINP = BINP = 0V
TINP(BINP) = 12V
T
A
= 25°C
BOOST = 12V
TS = GND
BOOST SUPPLY VOLTAGE (V)
0
0
QUIESCENT CURRENT (μA)
50
150
200
250
6 7 8 9 10111213
400
4446 G02
100
12345 14
300
350
TINP = BINP = 0V
TINP = 0V, BINP = 12V
TINP = 12V, BINP = 0V
T
A
= 25°C
V
CC
= 12V
TS = GND
TEMPERATURE (°C)
V
CC
SUPPLY CURRENT (μA)
350
360
370
4446 G03
330
300
–40 –25 –10 5 20 35 50 65 80 95 110
125
380
340
320
310
TINP = BINP = 0V
V
CC
= BOOST = 12V
TS = GND
TINP(BINP) = 12V