Datasheet

LTC4362-1/LTC4362-2
5
436212fa
TYPICAL PERFORMANCE CHARACTERISTICS
Normal Start-Up Sequence Turn-On Ramp-Up Entering Sleep Mode
PIN FUNCTIONS
GATEP: Gate Drive for External P-channel MOSFET. GATEP
connects to the gate of an optional external P-channel
MOSFET to protect against negative voltages at IN. Inter-
nally clamped to 5.8V below V
IN
. An internal 2M resistor
connects this pin to ground. Connect to IN if unused.
GND: Device Ground.
IN: Supply Voltage Input. Connect this pin to the input
power supply. This pin has an overvoltage threshold of
5.8V. After an overvoltage event, this pin must fall below
V
IN(OV)
– ΔV
OV
to release the overvoltage lockout. During
lockout, the internal N-channel MOSFET remains off and
the PWRGD pull-down releases.
ON: On Control Input. A logic low at ON enables the
LTC4362. A logic high at ON activates a low current pull-
down on the gate of the internal N-channel MOSFET and
causes the LTC4362 to enter a low current sleep mode. An
internal 5A current pulls ON down to ground. Connect
to ground or leave open if unused.
OUT: Source of Internal N-channel MOSFET. Connect to
load.
PWRGD: Power Good Status. Open-drain output with
internal 500k resistive pull-up to OUT. Pulls low 65ms
after the MOSFET gate ramps above its internal gate high
threshold.
SENSE, Exposed Pad: Current Sense Node and Internal
N-channel MOSFET Drain. An internal sense resistor
between IN and SENSE is used to implement the 1.5A
overcurrent threshold. The exposed pad is connected to
SENSE and must be soldered to an electrically isolated
printed circuit board trace to properly transfer the heat
out of the package. To disable the overcurrent function,
connect SENSE and the exposed pad to IN.
20ms/DIV
V
IN
5V/DIV
V
OUT
5V/DIV
I
CABLE
0.5A/DIV
FIGURE 4 CIRCUIT
R
IN
= 150m, L
IN
= 0.7µH
LOAD = 10, C
OUT
= 10µF
436212 G10
1ms/DIV
V
IN
5V/DIV
V
OUT
5V/DIV
I
CABLE
0.5A/DIV
FIGURE 4 CIRCUIT
R
IN
= 150m, L
IN
= 0.7µH
LOAD = 10, C
OUT
= 10µF
436212 G11
50µs/DIV
V
IN
5V/DIV
V
OUT
5V/DIV
V
ON
5V/DIV
I
CABLE
0.5A/DIV
FIGURE 4 CIRCUIT
R
IN
= 150m, L
IN
= 0.7µH
LOAD = 10, C
OUT
= 10µF
436212 G12
Specifi cations are at T
A
= 25°C, V
IN
= 5V, V
ON
= 0V unless otherwise noted.