Datasheet

LTC4362-1/LTC4362-2
3
436212fa
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND unless otherwise
specifi ed.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Supplies
V
IN
Input Voltage Range
l
2.5 28 V
V
IN(UVL)
Input Undervoltage Lockout V
IN
Rising
l
1.8 2.1 2.45 V
I
IN
Input Supply Current V
ON
= 0V
V
ON
= 2.5V
l
l
220
1.5
400
10
µA
µA
Thresholds
V
IN(OV)
IN Pin Overvoltage Threshold V
IN
Rising
l
5.684 5.8 5.916 V
ΔV
OV
Overvoltage Hysteresis
l
25 100 200 mV
Input Pins
V
ON(TH)
ON Input Threshold
l
0.4 1.5 V
I
ON
ON Pull-Down Current V
ON
= 2.5V
l
2.5 5 10 µA
Output Pins
V
OUT(UP)
OUT Turn-On Ramp-Rate V
OUT
= 0.5V to 4V
l
1.5 3 4.5 V/ms
I
OUT
OUT Leakage Current V
ON
= 2.5V, V
OUT
= 5V
l
0±3 µA
V
GATEP(CLP)
IN to GATEP Clamp Voltage V
IN
= 8V to 28V
l
5 5.8 7.5 V
R
GATEP
GATEP Pull-Down Resistance V
GATEP
= 3V
l
0.8 2 3.2 M
V
PWRGD(OL)
PWRGD Output Low Voltage V
IN
= 5V, I
PWRGD
= 3mA
l
0.23 0.4 V
R
PWRGD
PWRGD Pull-Up Resistance to OUT V
IN
= 6.5V, V
PWRGD
= 1V
l
250 500 800 k
Internal N-Channel MOSFET
R
ON
On Resistance I
OUT
= 0.5A
l
40 70 m
I
TRIP
Overcurrent Threshold
l
1.2 1.5 1.8 A
I
AS
Peak Avalanche Current L = 0.1mH (Note 5) 10 A
E
AS
Single Pulse Avalanche Energy I
AS
= 10A, L = 0.1mH (Note 5) 10 mJ
Delay
t
ON
Turn-On Delay V
IN
High to V
OUT
= 0.5V, R
OUT
= 1k
l
50 130 200 ms
t
OFF(OV)
Turn-Off Delay for Overvoltage
V
IN
= 5V 6.5V to V
OUT
= 4.5V, R
OUT
= 1k
l
0.45 1 µs
t
OFF(OC)
Turn-Off Delay for Overcurrent
I
OUT
= 0.5A 3A to V
OUT
= 4.5V
l
51020 µs
t
PWRGD (LH)
PWRGD Rising Delay
V
IN
= 5V 6.5V to PWRGD High
l
0.3 1 µs
t
PWRGD (HL)
PWRGD Falling Delay
V
IN
= 0V 5V, V
OUT
= 0.5V to PWRGD Low,
R
OUT
= 1k
l
25 65 100 ms
t
ON(OFF)
ON High to N-channel MOSFET Off
V
ON
= 0V 2.5V
l
40 100 µs
ESD Protection
ESD Protection for IN to GND C
OUT
= 1µF, Human Body Model ±25 kV
The l denotes the specifi cations which apply over the full operating
temperature range, otherwise specifi cations are at T
A
= 25°C. V
IN
= 5V, V
ON
= 0V unless otherwise noted.
Note 3: The minimum drain-source breakdown voltage of the internal
MOSFET is 28V. Driving the IN and SENSE pins more than 28V above OUT
may damage the device if the E
AS
capability of the MOSFET is exceeded.
Note 4: An internal current sense resistor ties IN and SENSE. Driving
SENSE relative to IN may damage the resistor.
Note 5: The I
AS
and E
AS
typical values are based on characterization and
are not production tested.