Datasheet

LTC4362-1/LTC4362-2
11
436212fa
Figure 9. Layout for External P-channel MOSFET Confi guration
C
OUT
is the decoupling capacitor of the protected circuit
and its value is largely determined by the circuit require-
ments. Using a larger C
OUT
works with L
IN
to slow down
the dV/dt at OUT, allowing time for the LTC4362 to shut
off its MOSFET before V
OUT
overshoots to a dangerous
voltage. A larger C
OUT
also helps to lower the ΔV
OUT
due
to the discharge of energy in L
IN
if the MOSFET BV
DSS
is
used as an input clamp.
436212 F08
9
3
4
2
1
6
5
7
8
Si1471DH
456
321
SUPPLY
GND
OUT
LTC4362
APPLICATIONS INFORMATION
Layout Considerations
Figure 9 shows an example PCB layout for the LTC4362
with an external P-channel MOSFET for negative voltage
protection. Keep the traces to the internal N-channel
MOSFET wide and short. The PCB traces associated with
the power path through the internal N-channel MOSFET
should have low resistance.