Datasheet

LTC4217
6
4217fe
TEMPERATURE (°C)
–50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
–25 0 25
4217 G18
50 75 150125100
V
ISET
(V)
TEMPERATURE (°C)
–50
105
100
95
90
85
80
–25 0 25
4217 G13
50 75 100
I
MON
(µA)
V
DD
= 3.3V, 12V, 24V
I
LOAD
= 2A
TEMPERATURE (°C)
–50
I
GATE
PULL-UP (µA)
–26.0
–25.5
–25.0
–24.5
–24.0
–25 0 25
4217 G14
50 75 100
I
GATE
(µA)
0
0
GATE DRIVE (V
GATE
– V
SOURCE
) (V)
7
6
5
4
3
2
1
–5 –10 –15 –20
4217 G15
–25 –30
V
DD
= 12V
V
DD
= 3.3V
V
DD
(V)
0
6.2
6.0
5.8
5.6
5.4
5.2
5 10 15
4217 G16
20 25 30
GATE DRIVE (V
GATE
– V
SOURCE
) (V)
TEMPERATURE (°C)
–50
6.15
6.14
6.13
6.12
6.11
6.10
–25 0 25
4217 G17
50 75 100
GATE DRIVE (V
GATE
– V
SOURCE
) (V)
I
LOAD
(mA)
0
0
PG, FLT V
OUT
LOW (V)
14
12
10
8
6
4
2
2 4 6 8
4217 G12
10 12
FLT
PG
TEMPERATURE (°C)
–50
60
50
40
30
20
10
0
–25 0 25
4217 G10
50 75 100
R
ON
(mΩ)
V
DD
= 3.3V, 12V, 24V
V
DS
(V)
0.1
0.01
I
D
(A)
0.1
1
10
1 10 100
4217 G11
T
A
= 25°C
MULTIPLE PULSE
DUTY CYCLE = 0.2
DC
10s
100ms
10ms
1ms
1s
Typical perForMance characTerisTics
R
ON
vs V
DD
and Temperature MOSFET SOA Curve
I
MON
vs Temperature and V
DD
Gate Pull-Up Current
vs Gate Drive
PG, F LT V
OUT
Low vs I
LOAD
T
A
= 25°C, V
DD
= 12V unless otherwise noted.
GATE Pull-Up Current
vs Temperature
Gate Drive vs V
DD
Gate Drive vs Temperature
V
ISET
vs Temperature