Datasheet

LTC3866
26
3866fb
1. The V
IN
current is the DC supply current given in the
Electrical Characteristics table, which excludes MOSFET
driver and control currents. V
IN
current typically results
in a small (<0.1%) loss.
2. INTV
CC
current is the sum of the MOSFET driver and
control currents. The MOSFET driver current results
from switching the gate capacitance of the power
MOSFETs. Each time a MOSFET gate is switched from
low to high to low again, a packet of charge dQ moves
from INTV
CC
to ground. The resulting dQ/dt is a current
out of INTV
CC
that is typically much larger than the
control circuit current. In continuous mode, I
GATECHG
= f(Q
T
+ Q
B
), where Q
T
and Q
B
are the gate charges
of the topside and bottom side MOSFETs. Supplying
INTV
CC
power through EXTV
CC
from an output-derived
source will scale the V
IN
current required for the driver
and control circuits by a factor of (duty cycle)/(effi-
ciency). For example, in a 20V to 5
V application, 10mA
of INTV
CC
current results in approximately 2.5mA of
V
IN
current. This reduces the mid-current loss from
10% or more (if the driver was powered directly from
V
IN
) to only a few percent.
3. I
2
R losses are predicted from the DC resistances of the
fuse (if used), MOSFET, inductor and current sense re-
sistor (if used). In continuous mode, the average output
current flows through L and R
SENSE
, but is chopped
between the topside MOSFET and the synchronous MOS-
FET. If the two MOSFETs have approximately the same
R
DS(ON)
, then the resistance of one MOSFET can simply
be
summed with the resistances of L and R
SENSE
to
obtain I
2
R losses. For example, if each R
DS(ON)
= 10mΩ,
R
L
= 10mΩ, R
SENSE
= 5mΩ, then the total resistance is
25mΩ. This results in losses ranging from 2% to 8%
as the output current increases from 3A to 15A for a 5V
output, or a 3% to 12% loss for a 3.3V output.
Efficiency varies as the inverse square of V
OUT
for the
same external components and output power level. The
combined effects of increasingly lower output voltages
and higher currents required by high performance digital
systems is not doubling but quadrupling the importance
of loss terms in the switching regulator system!
4. Transition losses apply only to the topside MOSFET(s),
and become significant only when operating at high
input voltages (typically 15V or greater). Transition
losses can be estimated from:
Transition Loss = (1.7) V
IN
2
• I
O(MAX)
• C
RSS
• f
Other hidden losses such as copper trace and internal
battery resistances can account for an additional 5%
to 10% efficiency degradation in portable systems. It
is very important to include these system level losses
during the design phase. The internal battery and fuse
resistance losses can be minimized by making sure that
C
IN
has adequate charge storage and very low ESR at
the switching frequency. A 25W supply will
typically
require a minimum of 20µF to 40µF of capacitance
having a maximum of 20mΩ to 50mΩ of ESR. Other
losses, including Schottky conduction losses during
dead time and inductor core losses, generally account
for less than 2% total additional loss.
Checking Transient Response
The regulator loop response can be checked by looking at
the load current transient response. Switching regulators
take several cycles to respond to a
step in DC (resistive)
load current. When a load step occurs, V
OUT
shifts by an
amount equal to ∆I
LOAD
• ESR, where ESR is the effective
series resistance of C
OUT
. ∆I
LOAD
also begins to charge or
discharge C
OUT
, generating the feedback error signal that
forces the regulator to adapt to the current change and
return V
OUT
to its steady-state value. During this recovery
time V
OUT
can be monitored for excessive overshoot or
ringing, which would indicate a stability problem. The
availability of the ITH pin not only allows optimization of
control loop behavior
but also provides a DC-coupled and
AC-filtered closed-loop response test point. The DC step,
rise time and settling at this test point truly reflects the
closed-loop response. Assuming a predominantly second
order system, phase margin and/or damping factor can
be estimated using the percentage of overshoot seen at
this pin. The bandwidth can also be estimated by examin-
ing the rise time
at the pin. The ITH external components
shown in the Typical Application circuit will provide an
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