Datasheet

LTC3835-1
19
38351fc
APPLICATIONS INFORMATION
Effi ciency Considerations
The percent effi ciency of a switching regulator is equal to
the output power divided by the input power times 100%.
It is often useful to analyze individual losses to determine
what is limiting the effi ciency and which change would
produce the most improvement. Percent effi ciency can
be expressed as:
%Effi ciency = 100% – (L1 + L2 + L3 + ...)
where L1, L2, etc. are the individual losses as a percent-
age of input power.
Although all dissipative elements in the circuit produce
losses, four main sources usually account for most of the
losses in LTC3835-1 circuits: 1) IC V
IN
current, 2) INTV
CC
regulator current, 3) I
2
R losses, 4) Topside MOSFET
transition losses.
1. The V
IN
current has two components: the fi rst is the
DC supply current given in the Electrical Characteristics
table, which excludes MOSFET driver and control cur-
rents; the second is the current drawn from the 3.3V
linear regulator output. V
IN
current typically results in
a small (<0.1%) loss.
2. INTV
CC
current is the sum of the MOSFET driver and
control currents. The MOSFET driver current results
from switching the gate capacitance of the power
MOSFETs. Each time a MOSFET gate is switched from
low to high to low again, a packet of charge dQ moves
from INTV
CC
to ground. The resulting dQ/dt is a cur-
rent out of INTV
CC
that is typically much larger than the
control circuit current. In continuous mode, I
GATECHG
= f(Q
T
+ Q
B
), where Q
T
and Q
B
are the gate charges of
the topside and bottom side MOSFETs.
3. I
2
R losses are predicted from the DC resistances of the
fuse (if used), MOSFET, inductor, current sense resis-
tor, and input and output capacitor ESR. In continuous
mode the average output current fl ows through L and
R
SENSE
, but is “chopped” between the topside MOSFET
and the synchronous MOSFET. If the two MOSFETs have
approximately the same R
DS(ON)
, then the resistance
of one MOSFET can simply be summed with the resis-
tances of L, R
SENSE
and ESR to obtain I
2
R losses. For
example, if each R
DS(ON)
= 30mΩ, R
L
= 50mΩ, R
SENSE
= 10mΩ and R
ESR
= 40mΩ (sum of both input and
output capacitance losses), then the total resistance
is 130mΩ. This results in losses ranging from 3% to
13% as the output current increases from 1A to 5A for
a 5V output, or a 4% to 20% loss for a 3.3V output.
Effi ciency varies as the inverse square of V
OUT
for the
same external components and output power level. The
combined effects of increasingly lower output voltages
and higher currents required by high performance digital
systems is not doubling but quadrupling the importance
of loss terms in the switching regulator system!
4. Transition losses apply only to the topside MOSFET(s),
and become signifi cant only when operating at high
input voltages (typically 15V or greater). Transition
losses can be estimated from:
Transition Loss = (1.7) V
IN
2
I
O(MAX)
C
RSS
f
Other “hidden” losses such as copper trace and internal
battery resistances can account for an additional 5% to
10% effi ciency degradation in portable systems. It is
very important to include these “system” level losses
during the design phase. The internal battery and fuse
resistance losses can be minimized by making sure that
C
IN
has adequate charge storage and very low ESR at
the switching frequency. A 25W supply will typically
require a minimum of 20μF to 40μF of capacitance hav-
ing a maximum of 20mΩ to 50mΩ of ESR. Other losses
including Schottky conduction losses during dead-time
and inductor core losses generally account for less than
2% total additional loss.