Datasheet
LTC3833
4
3833f
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating junction
temperature range, otherwise specifications are at T
A
= 25°C. V
IN
= 15V, V
FB
= V
OSNS
+
– V
OSNS
–
, unless otherwise noted. (Note 4)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
Gate Drivers
R
TG(HI)
TG Driver Pull-Up On-Resistance TG High 2.5 Ω
R
TG(LO)
TG Driver Pull-Down On-Resistance TG Low 1.2 Ω
R
BG(HI)
BG Driver Pull-Up On-Resistance BG High 2.5 Ω
R
BG(LO)
BG Driver Pull-Down On-Resistance BG Low 0.8 Ω
t
DLY(OFF)
Top Gate Off to Bottom Gate On
Delay Time
(Note 6) 20 ns
t
DLY(ON)
Bottom Gate Off to Top Gate On
Delay Time
(Note 6) 15 ns
Internal V
CC
Regulator and External V
CC
INTV
CC
Internal V
CC
Voltage 6V < V
IN
< 38V 5.1 5.3 5.55 V
INTV
CC
(%) Internal V
CC
Load Regulation I
CC
= 0mA to 50mA –1 –2 %
EXTV
CC(TH)
EXTV
CC
Switchover Voltage EXTV
CC
Rising 4.4 4.6 4.75 V
EXTV
CC(HYS)
EXTV
CC
Switchover Hysteresis 200 mV
∆EXTV
CC
EXTV
CC
Voltage Drop V
EXTVCC
= 5V, I
CC
= 50mA 200 mV
PGOOD Output
PGD
OV
PGOOD Upper Threshold V
FB
Rising (with Respect to Regulated
Feedback Voltage V
REG
)
5 7.5 10 %
PGD
UV
PGOOD Lower Threshold V
FB
Falling (with Respect to Regulated
Feedback Voltage V
REG
)
–10 –7.5 –5
%
PGD
HYS
PGOOD Hysteresis V
FB
Returning 2 %
V
PGD(LO)
PGOOD Low Voltage I
PGOOD
= 5mA 0.15 0.4 V
t
PGD(FALL)
Delay from OV/UV Fault to PGOOD Falling 20 µs
t
PGD(RISE)
Delay from OV/UV Recovery to PGOOD
Rising
10 µs
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The junction temperature (T
J
in °C) is calculated from the ambient
temperature (T
A
in °C) and power dissipation (P
D
in Watts) as follows:
T
J
= T
A
+ (P
D
• θ
JA
)
where θ
JA
(in °C/W) is the package thermal impedance provided in the Pin
Configuration section for the corresponding package.
Note 3: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. The maximum
rated junction temperature will be exceeded when this protection is active.
Continuous operation above the specified absolute maximum operating
junction temperature may impair device reliability or permanently damage
the device.
Note 4: The LTC3833 is tested under pulsed loading conditions such
that T
J
≈ T
A
. The LTC3833E is guaranteed to meet specifications from
0°C to 85°C junction temperature; specifications over the –40°C to
125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3833I is guaranteed to meet specifications over the full –40°C to 125°C
operating junction temperature range. Note that the maximum ambient
temperature consistent with these specifications is determined by specific
operating conditions in conjunction with board layout, the rated package
thermal impedance and other environmental factors.
Note 5: The LTC3833 is tested in a feedback loop that adjusts
V
FB
= V
OSNS
+
– V
OSNS
–
to achieve a specified error amplifier output voltage
(on ITH pin). The specification at 85°C is not tested in production. This
specification is assured by design, characterization and correlation to
production testing at 125°C.
Note 6: Delay times are measured using 50% levels.