Datasheet

LTC3633A-2/LTC3633A-3
6
3633a23f
Burst Mode Operation
Internal MOSFET R
DS(ON)
vs Temperature
Quiescent Current vs V
IN
Burst Mode Operation
Switch Leakage vs Temperature
Valley Current Limit
vs Temperature
TRACKSS Pull-Up Current
vs Temperature
TYPICAL PERFORMANCE CHARACTERISTICS
Shutdown Current vs V
IN
Load Step
4
I
Q
(µA)
100
200
300
500
8
20
3633a23 G11
0
600
900
800
700
400
610121614 18
90°C
25°C
–40°C
V
IN
(V)
4
I
Q
(µA)
2
4
6
10
8
20
3633a G12
0
12
24
22
16
18
20
14
8
6 1012141618
V
IN
(V)
–50
LEAKAGE CURRENT (nA)
1000
2000
3000
5000
0
150100 125
3633a23 G13
0
6000
10000
9000
8000
7000
4000
–25 25 50 75
TEMPERATURE (°C)
SYNCHRONOUS SWITCH
MAIN SWITCH
T
J
= 25°C, PV
IN1
= PV
IN2
= SV
IN
= 12V, f
SW
= 1MHz,
L = 1μH unless otherwise noted.
TEMPERATURE (°C)
–50
1.4
1.6
2.0
25 75
3633a23 G15
1.2
1.0
–25 0
50 100 125
0.8
0.6
1.8
I
TRACKSS
(µA)
–50
I
LIM
(A)
3.4
3.5
50
3633a23 G14
3.3
3.7
3.6
3.9
3.8
25–25 0 75 100 125
TEMPERATURE (°C)
I
L
1A/DIV
SW
10V/DIV
5µs/DIV
3633a23 G17
V
OUT
50mV/DIV
V
OUT
= 1.8V
I
LOAD
= 100mA
I
L
2A/DIV
20µs/DIV
3633a23 G18
V
OUT
AC-COUPLED
100mV/DIV
V
OUT
= 1.8V
I
LOAD
= 100mA to 3A
C
ITH
= 220pF
R
ITH
= 13k
–50 –25
0
R
DS(ON)
(m)
20
60
80
100
140
50
125
3633a23 G10
40
160
200
180
120
0 25 75 100
TEMPERATURE (°C)
TOP SWITCH
BOTTOM SWITCH