Datasheet

LTC3616
4
3616fc
For more information www.linear.com/LTC3616
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3616 is tested under pulsed load conditions such that T
J
≈
T
A
. The LTC3616E is guaranteed to meet specifications from 0°C to 85°C
junction temperature. Specifications over the –40°C to 125°C operating
junction temperature range are assured by design, characterization
and correlation with statistical process controls. The LTC3616I is
guaranteed to meet specifications over the –40°C to 125°C operating
junction temperature, the LTC3616H is guaranteed to meet specifications
over the –40°C to 150°C operating junction temperature range and the
LTC36146MP is guaranteed and tested to meet specifications over the
full –55°C to 150°C operating junction temperature range. High junction
temperatures degrade operating lifetimes; operating lifetime is derated
for temperature greater than 125°C. Note that the maximum ambient
temperature consistent with these specifications is determined by specific
operating conditions in conjunction with board layout, the rated package
thermal impedance and other environmental factors.
The junction temperature (T
J
) is calculated from the ambient temperature
(T
A
) and power dissipation (P
D
) according to the formula: T
J
= T
A
+ (P
D
• θ
JA
°C/W), where θ
JA
is the package thermal impedance. The maximum
ambient temperature is determined by specific operating conditions in
conjunction with board layout, the rated package thermal resistance and
other environmental factors.
elecTrical characTerisTics
The l denotes the specifications which apply over the specified operating
junction temperature range, otherwise specifications are at T
J
= 25°C (Note 2). V
IN
= 3.3V, RT/SYNC = SV
IN
unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
MODE
(Note 9)
Internal Burst Mode Operation 0.3 V
Pulse-Skipping Mode
SV
IN
– 0.3 V
Forced Continuous Mode 1.1 SV
IN
• 0.58 V
External Burst Mode Operation 0.45 0.8 V
PGOOD Power Good Voltage Windows TRACK/SS = SV
IN
, Entering Window
V
FB
Ramping Up
V
FB
Ramping Down
–3
3
–6
6
%
%
TRACK/SS = SV
IN
, Leaving Window
V
FB
Ramping Up
V
FB
Ramping Down
9
–9
11
–11
%
%
t
PGOOD
Power Good Blanking Time Entering and Leaving Window 70 105 140 µs
R
PGOOD
Power Good Pull-Down On-Resistance 8 17 33 Ω
V
RUN
RUN Voltage Input High
Input Low
l
l
1
0.4
V
V
Note 3:
This parameter is tested in a feedback loop which servos V
FB
to
the midpoint for the error amplifier (V
ITH
= 0.75V).
Note 4: External compensation on ITH pin.
Note 5: Tying the ITH pin to SV
IN
enables the internal compensation and
AVP mode.
Note 6: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 7: See description of the TRACK/SS pin in the Pin Functions section.
Note 8: In sourcing mode the average output current is flowing out of SW
pin. In sinking mode the average output current is flowing into
the SW Pin.
Note 9: See description of the MODE pin in the Pin Functions section.
Note 10: Guaranteed by correlation and design to wafer level
measurements for QFN packages.
Note 11: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 150°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.