Datasheet

LTC3588-1
4
35881fa
TYPICAL PERFORMANCE CHARACTERISTICS
I
VIN
in UVLO vs V
IN
I
VIN
in Sleep vs V
IN
UVLO Rising vs Temperature
UVLO Falling vs Temperature V
SHUNT
vs Temperature
Total Bridge Rectifi er Drop
vs Bridge Current
TEMPERATURE (°C)
–55
UVLO RISING (V)
5.2
5.0
4.6
4.2
4.8
4.4
4.0
3.8
25 105–15 65
35881 G03
125585–35 45
D1 = D0 = 1
D1 = D0 = 0
TEMPERATURE (°C)
–55
UVLO FALLING (V)
4.2
4.0
3.6
3.2
3.8
3.4
3.0
2.8
25 105–15 65
35881 G04
125585–35 45
D1 = D0 = 1
D1 = D0 = 0
D1 = 1, D0 = 0
BRIDGE CURRENT (A)
V
BRIDGE
(mV)
35881 G06
1800
1600
1400
1200
1000
800
600
400
200
0
1µ 10µ 10m1m100µ
85°C
25°C
–40°C
|V
PZ1
– V
PZ2
| – V
IN
V
IN
(V)
0
I
VIN
(nA)
1000
900
700
500
800
600
400
300
200
100
0
452
35881 G01
631
D1 = D0 = 1
85°C
25°C
–40°C
V
IN
(V)
2
I
VIN
(nA)
2400
2200
1800
1400
2000
1600
1200
1000
800
600
400
14810 16
35881 G02
181264
D1 = D0 = 0
85°C
25°C
–40°C
TEMPERATURE (°C)
–55
V
SHUNT
(V)
21.0
20.8
20.4
20.0
20.6
20.2
19.6
19.8
19.4
19.2
19.0
655 25 85 105
35881 G05
12545–15–35
I
SHUNT
= 25mA
I
SHUNT
= 1mA
ELECTRICAL CHARACTERISTICS
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3588-1 is tested under pulsed load conditions such
that T
J
≈ T
A
. The LTC3588E-1 is guaranteed to meet specifi cations
from 0°C to 85°C junction temperature. Specifi cations over the –40°C
to 125°C operating junction temperature range are assured by design,
characterization, and correlation with statistical process controls.
The LTC3588I-1 is guaranteed over the full –40°C to 125°C operating
junction temperature range. Note that the maximum ambient temperature
consistent with these specifi cations is determined by specifi c operating
conditions in conjunction with board layout, the rated package thermal
impedance and other environmental factors.
Note 3: The junction temperature (T
J
, in °C) is calculated from the ambient
temperature (T
A
, in °C) and power dissipation (P
D
, in Watts) according
to the formula: T
J
= T
A
+ (P
D
• θ
JA
), where θ
JA
(in °C/W) is the package
thermal impedance.
Note 4: Dynamic supply current is higher due to gate charge being
delivered at the switching frequency.