Datasheet

LTC3537
6
3537fd
TYPICAL PERFORMANCE CHARACTERISTICS
Feedback Voltage Change
vs Temperature Start-Up Voltage vs Temperature
Burst Mode Quiescent Current
vs V
OUTB
T
A
= 25°C unless otherwise noted.
TEMPERATURE (°C)
–40
VOLTAGE CHANGE (%)
0.05
0.00
–0.10
–0.15
–0.20
–0.25
–0.30
40 60200
3537 G16
80–20
NORMALIZED TO 20°C
V
FBB
AND V
FBL
TEMPERATURE (°C)
–40
V
INB
(V)
0.80
0.75
0.70
0.65
0.60
0.55
0.50
40 60200
3537 G17
80–20
V
OUTB
(V)
1.8
V
OUTB
(I
Q
) (µA)
60
50
30
40
20
10
3.8 4.33.32.8
3537 G18
4.82.3
V
INB
= 1.2V
ENLDO = HIGH
R
DS(ON)
vs V
OUTB
Oscillator Frequency Change vs
Temperature R
DS(ON)
Change vs Temperature
V
OUTB
(V)
1.5
R
DS(ON)
(Ω)
1.0
0.9
0.8
0.7
0.6
0.5
0.3
0.4
0.2
3.5 4 4.532.5
3537 G13
52
NMOS
PMOS
TEMPERATURE (°C)
–40
FREQUENCY CHANGE (%)
1
0
–1
–2
–3
–4
40 60200
3537 G14
80–20
NORMALIZED TO 25°C
TEMPERATURE (°C)
–40
R
DS(ON
) CHANGE (%)
30
20
10
0
–10
–20
–30
40 60200
3537 G15
80–20
NMOS
PMOS
NORMALIZED TO 25°C
Burst Mode Threshold Current
vs V
INB
Burst Mode Threshold Current
vs V
INB
Oscillator Frequency Change
vs V
OUTB
V
INB
(V)
0.8
30
20
10
0
60
50
40
LOAD CURRENT (mA)
1
1.2 1.4 1.6 1.8 2.42 2.2
3537 G10
ENTER BURST
LEAVE BURST
V
OUTB
= 3.3V
C
OUTB
= 10μF
L = 2.2μH
V
INB
(V)
0.9
120
100
60
80
40
20
0
180
160
140
LOAD CURRENT (mA)
1.4 1.9 2.4 2.9 4.43.4 3.9
3537 G11
ENTER BURST
LEAVE BURST
V
OUTB
= 5V
C
OUTB
= 10μF
L = 2.2μH
V
OUTB
(V)
1.5
FREQUENCY CHANGE (%)
1
0
–1
–2
–3
–5
–4
–6
3.5 4 4.532.5
3537 G12
52
NORMALIZED TO 3.3V